中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Transparent Al/WO3/Au film as anode for high efficiency organic light-emitting diodes

文献类型:期刊论文

作者Zhang, H. M.1,2; Choy, Wallace C. H.1,3
刊名ORGANIC ELECTRONICS
出版日期2008-12-01
卷号9期号:6页码:964-967
关键词Transparent Anode High Efficiency Organic Light Emission Devices High Colour Purity
ISSN号1566-1199
DOI10.1016/j.orgel.2008.07.001
英文摘要A transparent Al/WO3/Au anode is introduced to fabricate high efficiency organic light-emitting devices (OLEDs). By optimizing the thicknesses of each layers of the Al/WO3/Au structure, the transmittance of Al(7 nm)/WO3(3 nm)/Au(13 nm) has reached over 55%. Concerning the performance of OLEDs using the optimized anode, the electroluminescence (EL) current efficiency and brightness are enhanced and the EL spectrum is greatly narrowed as compared to the OLEDs using indium-tin-oxide (ITO) as the anode. The results indicate that the metal/metal oxide/metal transparent electrode is a good structure for the anode of high performance OLEDs. In addition, Al/WO3/Au can function as a composite transparent electrode for top-emitting CLEDs. (C) 2008 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000260969200006
出版者ELSEVIER SCIENCE BV
源URL[http://ir.iccas.ac.cn/handle/121111/65733]  
专题中国科学院化学研究所
通讯作者Choy, Wallace C. H.
作者单位1.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
3.Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
推荐引用方式
GB/T 7714
Zhang, H. M.,Choy, Wallace C. H.. Transparent Al/WO3/Au film as anode for high efficiency organic light-emitting diodes[J]. ORGANIC ELECTRONICS,2008,9(6):964-967.
APA Zhang, H. M.,&Choy, Wallace C. H..(2008).Transparent Al/WO3/Au film as anode for high efficiency organic light-emitting diodes.ORGANIC ELECTRONICS,9(6),964-967.
MLA Zhang, H. M.,et al."Transparent Al/WO3/Au film as anode for high efficiency organic light-emitting diodes".ORGANIC ELECTRONICS 9.6(2008):964-967.

入库方式: OAI收割

来源:化学研究所

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