Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction
文献类型：期刊论文
| 作者 | Huang, Jinying1; Yi, Mingdong1; Hummelgen, Ivo A.2; Ma, Dongge1 |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2009-02-01 |
| 卷号 | 10期号:1页码:210-213 |
| 关键词 | Ambipolar Organic Permeable Metal-base Transistor Heterojunction Air Stable |
| ISSN号 | 1566-1199 |
| DOI | 10.1016/j.orgel.2008.10.019 |
| 英文摘要 | In this paper, we report the fabrication of permeable metal-base organic transistors based on N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/C-60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively. (C) 2008 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000262889400031 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/66147]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | 1.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Univ Fed Parana, Dept Fis, Grp Organ Optoelect Devices, BR-81531990 Curitiba, Parana, Brazil |
| 推荐引用方式 GB/T 7714 | Huang, Jinying,Yi, Mingdong,Hummelgen, Ivo A.,et al. Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction[J]. ORGANIC ELECTRONICS,2009,10(1):210-213. |
| APA | Huang, Jinying,Yi, Mingdong,Hummelgen, Ivo A.,&Ma, Dongge.(2009).Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction.ORGANIC ELECTRONICS,10(1),210-213. |
| MLA | Huang, Jinying,et al."Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction".ORGANIC ELECTRONICS 10.1(2009):210-213. |
入库方式： OAI收割
来源：化学研究所
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