中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold

文献类型:期刊论文

作者Wang, Zhe1,2; Yu, Xinhong2; Xing, Rubo2; Han, Yanchun2; Takahara, Atsushi1
刊名JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
出版日期2009-07-01
卷号27期号:4页码:1958-1962
关键词Elastic Deformation Organic Semiconductors Plastic Deformation Polymer Films Surface Energy
ISSN号1071-1023
DOI10.1116/1.3167372
英文摘要A simple and efficient method for patterning polymeric semiconductors for applications in the field of organic electronics is proposed. The entire polymer layer, except for the desired pattern, is selectively lifted off from a flat poly(dimethylsiloxane) (PDMS) stamp surface by an epoxy mold with a relief pattern. This is advantageous because the elastic deformation of the PDMS stamp around protrusions of a patterned stamp under pressure can assist the plastic deformation of a polymer film along the pattern edges, yielding large area and high quality patterns, and the PDMS surface has low surface energy, which allows the easy removal of the polymer film.
语种英语
WOS记录号WOS:000268535600034
出版者A V S AMER INST PHYSICS
源URL[http://ir.iccas.ac.cn/handle/121111/66581]  
专题中国科学院化学研究所
通讯作者Wang, Zhe
作者单位1.Kyushu Univ, Inst Mat Chem & Engn, Nishi Ku, Fukuoka 8190395, Japan
2.Acad Sinica, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Wang, Zhe,Yu, Xinhong,Xing, Rubo,et al. Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,2009,27(4):1958-1962.
APA Wang, Zhe,Yu, Xinhong,Xing, Rubo,Han, Yanchun,&Takahara, Atsushi.(2009).Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,27(4),1958-1962.
MLA Wang, Zhe,et al."Micropatterning of polymeric semiconductor by selective lift-off method using epoxy mold".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 27.4(2009):1958-1962.

入库方式: OAI收割

来源:化学研究所

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