中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene

文献类型:期刊论文

作者Shi, Shengwei; Peng, Junbiao1; Lin, Jian2; Ma, Dongge2
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2009-04-01
卷号30期号:4页码:343-345
关键词Interface Dipole On/off Ratio Pentacene Reliability Write Once Read Many Times (Worm)
ISSN号0741-3106
DOI10.1109/LED.2009.2013976
英文摘要We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.
语种英语
WOS记录号WOS:000264629100011
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://ir.iccas.ac.cn/handle/121111/66885]  
专题中国科学院化学研究所
通讯作者Shi, Shengwei
作者单位1.S China Univ Technol, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China
2.Chinese Acad Sci, State Key Lab Polymer Phys & Chem, Changchun Inst Appl Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Shi, Shengwei,Peng, Junbiao,Lin, Jian,et al. Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene[J]. IEEE ELECTRON DEVICE LETTERS,2009,30(4):343-345.
APA Shi, Shengwei,Peng, Junbiao,Lin, Jian,&Ma, Dongge.(2009).Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene.IEEE ELECTRON DEVICE LETTERS,30(4),343-345.
MLA Shi, Shengwei,et al."Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene".IEEE ELECTRON DEVICE LETTERS 30.4(2009):343-345.

入库方式: OAI收割

来源:化学研究所

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