中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Luminescence of Native Defects in MgGa2O4

文献类型:期刊论文

作者Liu, Zhongshi1,2; Hu, Peng1,2; Jing, Xiping1,2; Wang, Lingxuan1,3
刊名JOURNAL OF THE ELECTROCHEMICAL SOCIETY
出版日期2009
卷号156期号:1页码:H43-H46
关键词Annealing Defect States Magnesium Compounds Paramagnetic Resonance Photoluminescence Powders
ISSN号0013-4651
DOI10.1149/1.3005970
英文摘要MgGa2O4 powder samples are prepared by high-temperature solid-state reactions and the as-produced samples are annealed in various atmospheres with different O-2, partial pressures, such as vacuum, O-2, and N-2, as well as Mg and Ga metal atmospheres. After annealed in the atmospheres with low O-2 partial pressures, the samples give bright blue luminescence with the main peak at 415 nm (2.99 eV) and peak width (full width at half maximum) 113 nm (0.84 eV). Based on the photoluminescence (PL) spectra, PL decay curve, and electron paramagnetic resonance spectra, as well as the defect equilibrium analysis, the PL mechanism of donor-acceptor recombination is proposed, in which V-O(center dot) is assigned as the donor and V-Ga(') is assigned as the acceptor. The PL intensity of MgGa2O4 is comparable with the commercial ZnO phosphor.
语种英语
WOS记录号WOS:000261209800072
出版者ELECTROCHEMICAL SOC INC
源URL[http://ir.iccas.ac.cn/handle/121111/67897]  
专题中国科学院化学研究所
通讯作者Liu, Zhongshi
作者单位1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
2.Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China
3.Chinese Acad Sci, Inst Chem, Key Lab Photochem, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Liu, Zhongshi,Hu, Peng,Jing, Xiping,et al. Luminescence of Native Defects in MgGa2O4[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2009,156(1):H43-H46.
APA Liu, Zhongshi,Hu, Peng,Jing, Xiping,&Wang, Lingxuan.(2009).Luminescence of Native Defects in MgGa2O4.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(1),H43-H46.
MLA Liu, Zhongshi,et al."Luminescence of Native Defects in MgGa2O4".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.1(2009):H43-H46.

入库方式: OAI收割

来源:化学研究所

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