Luminescence of Native Defects in MgGa2O4
文献类型:期刊论文
作者 | Liu, Zhongshi1,2; Hu, Peng1,2; Jing, Xiping1,2; Wang, Lingxuan1,3 |
刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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出版日期 | 2009 |
卷号 | 156期号:1页码:H43-H46 |
关键词 | Annealing Defect States Magnesium Compounds Paramagnetic Resonance Photoluminescence Powders |
ISSN号 | 0013-4651 |
DOI | 10.1149/1.3005970 |
英文摘要 | MgGa2O4 powder samples are prepared by high-temperature solid-state reactions and the as-produced samples are annealed in various atmospheres with different O-2, partial pressures, such as vacuum, O-2, and N-2, as well as Mg and Ga metal atmospheres. After annealed in the atmospheres with low O-2 partial pressures, the samples give bright blue luminescence with the main peak at 415 nm (2.99 eV) and peak width (full width at half maximum) 113 nm (0.84 eV). Based on the photoluminescence (PL) spectra, PL decay curve, and electron paramagnetic resonance spectra, as well as the defect equilibrium analysis, the PL mechanism of donor-acceptor recombination is proposed, in which V-O(center dot) is assigned as the donor and V-Ga(') is assigned as the acceptor. The PL intensity of MgGa2O4 is comparable with the commercial ZnO phosphor. |
语种 | 英语 |
WOS记录号 | WOS:000261209800072 |
出版者 | ELECTROCHEMICAL SOC INC |
源URL | [http://ir.iccas.ac.cn/handle/121111/67897] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Liu, Zhongshi |
作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China 2.Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Beijing Natl Lab Mol Sci, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Inst Chem, Key Lab Photochem, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Liu, Zhongshi,Hu, Peng,Jing, Xiping,et al. Luminescence of Native Defects in MgGa2O4[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2009,156(1):H43-H46. |
APA | Liu, Zhongshi,Hu, Peng,Jing, Xiping,&Wang, Lingxuan.(2009).Luminescence of Native Defects in MgGa2O4.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,156(1),H43-H46. |
MLA | Liu, Zhongshi,et al."Luminescence of Native Defects in MgGa2O4".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 156.1(2009):H43-H46. |
入库方式: OAI收割
来源:化学研究所
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