Photoresponsive nanoscale columnar transistors
文献类型：期刊论文
| 作者 | Guo, Xuefeng1; Xiao, Shengxiong2,3; Myers, Matthew2,3; Miao, Qian4; Steigerwald, Michael L.2,3; Nuckolls, Colin2,3 |
| 刊名 | PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
 |
| 出版日期 | 2009-01-20 |
| 卷号 | 106期号:3页码:691-696 |
| 关键词 | Chemistry Field Effect Transistor Nanofabrication Nanoscience Self-assembly |
| ISSN号 | 0027-8424 |
| DOI | 10.1073/pnas.0807596106 |
| 英文摘要 | This study reports a general methodology for making stable high-performance photosensitive field effect transistors (FET) from self-assembled columns of polycyclic aromatic hydrocarbons by using single-walled carbon nanotubes (SWNTs) as point contacts. In particular, the molecules used in this work are liquid crystalline materials of tetra(dodecyloxy) hexabenzocoronenes (HBCs) that are able to self-organize into columnar nanostructures with a diameter similar to that of SWNTs and then form nanoscale columnar transistors. To rule out potential artifacts, 2 different structural approaches were used to construct devices. One approach is to coat thin films of HBCs onto the devices with the SWNT-metal junctions protected by hydrogensilsesquioxane resin (HSQ), and the other is to place a droplet of HBC exactly on the nanogaps of SWNT electrodes. Both types of devices showed typical FET behaviors, indicating that SWNT-molecule-SWNT nano-junctions are responsible for the electrical characteristics of the devices. After thermally annealing the devices, HBC molecules assembled into columnar structures and formed more efficacious transistors with increased current modulation and higher gate efficiency. More interestingly, when the devices were exposed to visible light, photocurrents with an on/off ratio of >3 orders of magnitude were observed. This study demonstrates that stimuli-responsive nanoscale transistors have the potential applications in ultrasensitive devices for environmental sensing and solar energy harvesting. |
| 语种 | 英语 |
| WOS记录号 | WOS:000262809700006 |
| 出版者 | NATL ACAD SCIENCES |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68027]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Guo, Xuefeng |
| 作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing Natl Lab Mol Sci,State Key Lab Struct Che, Beijing 100871, Peoples R China 2.Columbia Univ, Ctr Elect Mol Nanostruct, New York, NY 10027 USA 3.Columbia Univ, Dept Chem, New York, NY 10027 USA 4.Chinese Univ Hong Kong, Dept Chem, Shatin, Hong Kong, Peoples R China |
| 推荐引用方式 GB/T 7714 | Guo, Xuefeng,Xiao, Shengxiong,Myers, Matthew,et al. Photoresponsive nanoscale columnar transistors[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,2009,106(3):691-696. |
| APA | Guo, Xuefeng,Xiao, Shengxiong,Myers, Matthew,Miao, Qian,Steigerwald, Michael L.,&Nuckolls, Colin.(2009).Photoresponsive nanoscale columnar transistors.PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA,106(3),691-696. |
| MLA | Guo, Xuefeng,et al."Photoresponsive nanoscale columnar transistors".PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA 106.3(2009):691-696. |
入库方式： OAI收割
来源：化学研究所
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