Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics
文献类型：期刊论文
| 作者 | Serbena, J. P. M.1,2; Huang, J. Y.2; Ma, D.2; Wang, Z. Y.3; Huemmelgen, I. A.1 |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 10期号:2页码:357-362 |
| 关键词 | Characterization Permeable-base Hybrid Transistor Organic Semiconductor Vertical-architecture Transistor |
| ISSN号 | 1566-1199 |
| DOI | 10.1016/j.orgel.2008.11.001 |
| 英文摘要 | In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation. (C) 2008 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000264269600021 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68033]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Huemmelgen, I. A. |
| 作者单位 | 1.Univ Fed Parana, Grp Organ Optoelect Devices, Dept Fis, BR-81531990 Curitiba, Parana, Brazil 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China 3.Carleton Univ, Dept Chem, Ottawa, ON K1S 5B6, Canada |
| 推荐引用方式 GB/T 7714 | Serbena, J. P. M.,Huang, J. Y.,Ma, D.,et al. Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics[J]. ORGANIC ELECTRONICS,2009,10(2):357-362. |
| APA | Serbena, J. P. M.,Huang, J. Y.,Ma, D.,Wang, Z. Y.,&Huemmelgen, I. A..(2009).Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics.ORGANIC ELECTRONICS,10(2),357-362. |
| MLA | Serbena, J. P. M.,et al."Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics".ORGANIC ELECTRONICS 10.2(2009):357-362. |
入库方式： OAI收割
来源：化学研究所
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