Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)
文献类型：期刊论文
| 作者 | Zhang, Baohua1,2; Li, Wenmu1,2; Yang, Junwei1; Fu, Yingying1,2; Xie, Zhiyuan1; Zhang, Suobo1; Wang, Lixiang1 |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY C
 |
| 出版日期 | 2009-05-07 |
| 卷号 | 113期号:18页码:7898-7903 |
| ISSN号 | 1932-7447 |
| DOI | 10.1021/jp810824m |
| 英文摘要 | Herein, an insulating fluorinated polyimide (F-PI) is utilized as an ultrathin buffer layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) in polymer light-emitting diodes to enhance the device performance. The selective solubility of F-PI in common solvents avoids typical intermixing interfacial problems during the sequential multilayer spin-coating process. Compared to the control device, the F-PI modification causes the luminous and power efficiencies of the devices to be increased by a factor of 1.1 and 4.7, respectively, along with almost 3-fold device lifetime enhancement. Photovoltaic measurement, single-hole devices, and X-ray photoelectron spectroscopy, are utilized to investigate the underlying, mechanisms, and it is found that the hole injection barrier is lowered owing to the interactions between the PEDOT:PSS and F-PI. The F-PI modified PEDOT:PSS layer demonstrates step-up ionization potential profiles from the intrinsic bulk PEDOT:PSS side toward the F-PI-modified PEDOT:PSS surface, which facilitate the hole injection. Moreover, the insulating F-PI layer at the PEDOT:PSS surface is also favorable for the hole injection by blocking the electrons and strengthening the local electric field at the interface. |
| 语种 | 英语 |
| WOS记录号 | WOS:000265687600064 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68139]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Xie, Zhiyuan |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Chinese Acad Sci, Grad Sch, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, Baohua,Li, Wenmu,Yang, Junwei,et al. Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2009,113(18):7898-7903. |
| APA | Zhang, Baohua.,Li, Wenmu.,Yang, Junwei.,Fu, Yingying.,Xie, Zhiyuan.,...&Wang, Lixiang.(2009).Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate).JOURNAL OF PHYSICAL CHEMISTRY C,113(18),7898-7903. |
| MLA | Zhang, Baohua,et al."Performance Enhancement of Polymer Light-Emitting Diodes by Using Ultrathin Fluorinated Polyimide Modifying the Surface of Poly(3,4-ethylene dioxythiophene):Poly(styrenesulfonate)".JOURNAL OF PHYSICAL CHEMISTRY C 113.18(2009):7898-7903. |
入库方式： OAI收割
来源：化学研究所
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