Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes
文献类型：期刊论文
| 作者 | Wang, Fengxia; Qiao, Xianfeng; Xiong, Tao; Ma, Dongge |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2009-04-15 |
| 卷号 | 105期号:8 |
| 关键词 | Electrical Conductivity Organic Light Emitting Diodes Organic Semiconductors Thin Film Devices Tungsten Compounds Ultraviolet Spectra |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3116204 |
| 英文摘要 | By introducing tungsten oxide (WO3) doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine (NPB) hole injection layer, the great improvement in device efficiency and the organic film morphology stability at high temperature were realized for organic light-emitting diodes (OLEDs). The detailed investigations on the improvement mechanism by optical, electric, and film morphology properties were presented. The experimental results clearly demonstrated that using WO3 doped NPB as the hole injection layer in OLEDs not only reduced the hole injection barrier and enhanced the transport property, leading to low operational voltage and high efficiency, but also improved organic film morphology stability, which should be related to the device stability. It could be seen that due to the utilization of WO3 doped NPB hole injection layer in NPB/tris (8-quinolinolato) aluminum (Alq(3))-based device, the maximum efficiency reached 6.1 cd A(-1) and 4.8 lm W-1, which were much higher than 4.5 cd A(-1) and 1.1 lm W-1 of NPB/Alq(3) device without hole injection layer. The device with WO3 doped NPB hole injection layer yet gave high efficiency of 6.1 cd A(-1) (2.9 lm W-1) even though the device was fabricated at substrate temperature of 80 degrees C. These results adequately indicated that WO3 doped NPB was a promising hole injection layer for high efficiency and high stability OLEDs. |
| 语种 | 英语 |
| WOS记录号 | WOS:000268064700176 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68403]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Fengxia |
| 作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Fengxia,Qiao, Xianfeng,Xiong, Tao,et al. Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes[J]. JOURNAL OF APPLIED PHYSICS,2009,105(8). |
| APA | Wang, Fengxia,Qiao, Xianfeng,Xiong, Tao,&Ma, Dongge.(2009).Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes.JOURNAL OF APPLIED PHYSICS,105(8). |
| MLA | Wang, Fengxia,et al."Tungsten oxide doped N,N-'-di(naphthalen-1-yl)-N,N-'-diphenyl-benzidine as hole injection layer for high performance organic light-emitting diodes".JOURNAL OF APPLIED PHYSICS 105.8(2009). |
入库方式： OAI收割
来源：化学研究所
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