Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate
文献类型：期刊论文
| 作者 | Wang, Wei1,2; Shi, Jiawei2; Ma, Dongge1 |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2009-05-01 |
| 卷号 | 56期号:5页码:1036-1039 |
| 关键词 | Memory Nanoparticle Floating Gate Organic Thin-film Transistor (Otft) |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2009.2016031 |
| 英文摘要 | Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF(2)) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF(2) nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed. |
| 语种 | 英语 |
| WOS记录号 | WOS:000265712400046 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68549]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Wei |
| 作者单位 | 1.Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 2.Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Wei,Shi, Jiawei,Ma, Dongge. Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2009,56(5):1036-1039. |
| APA | Wang, Wei,Shi, Jiawei,&Ma, Dongge.(2009).Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate.IEEE TRANSACTIONS ON ELECTRON DEVICES,56(5),1036-1039. |
| MLA | Wang, Wei,et al."Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate".IEEE TRANSACTIONS ON ELECTRON DEVICES 56.5(2009):1036-1039. |
入库方式： OAI收割
来源：化学研究所
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