Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes
文献类型：期刊论文
| 作者 | Wang, Fengxia; Xiong, Tao; Qiao, Xianfeng; Ma, Dongge |
| 刊名 | ORGANIC ELECTRONICS
 |
| 出版日期 | 2009-04-01 |
| 卷号 | 10期号:2页码:266-274 |
| 关键词 | Csoh Doped Alq(3) Iterfacial Modification Iboled |
| ISSN号 | 1566-1199 |
| DOI | 10.1016/j.orgel.2008.11.018 |
| 英文摘要 | It has been found that cesium hydroxide (CsOH) doped tris(8-hydroxyquinoline) aluminum (Alq(3)) as an interfacial modification layer on indium-tin-oxide (ITO) is an effective cathode structure in inverted bottom-emission organic light-emitting diodes (IBOLEDs). The efficiency and high temperature stability of IBOLEDs with CsOH:Alq(3) interfacial layer are greatly improved with respect to the IBOLEDs with the case of Cs2CO3:Alq(3). Herein, we have studied the origin of the improvement in efficiency and high temperature stability via the modification role of CsOH:Alq(3) interfacial layer on ITO cathode in IBOLEDs by various characterization methods, including atomic force microscopy (AFM), ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS) and capacitance versus voltage (C-V). The results clearly demonstrate that the CsOH:Alq(3) interfacial modification layer on ITO cathode not only enhances the stability of the cathode interface and electron-transporting layer above it. which are in favor of the improvement in device stability, but also reduces the electron injection barrier and increases the carrier density for current conduction, leading to higher efficiency. (C) 2008 Elsevier B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000264269600008 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/68561]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Ma, Dongge |
| 作者单位 | Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Fengxia,Xiong, Tao,Qiao, Xianfeng,et al. Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes[J]. ORGANIC ELECTRONICS,2009,10(2):266-274. |
| APA | Wang, Fengxia,Xiong, Tao,Qiao, Xianfeng,&Ma, Dongge.(2009).Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes.ORGANIC ELECTRONICS,10(2),266-274. |
| MLA | Wang, Fengxia,et al."Origin of improvement in device performance via the modification role of cesium hydroxide doped tris(8-hydroxyquinoline) aluminum interfacial layer on ITO cathode in inverted bottom-emission organic light-emitting diodes".ORGANIC ELECTRONICS 10.2(2009):266-274. |
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来源：化学研究所
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