A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction
文献类型:期刊论文
作者 | Zhang, Hongliang1; Liu, Yunqi1; Cao, Lingchao1; Wei, Dacheng1; Wang, Yu1; Kajiura, Hisashi2; Li, Yongming2; Noda, Kazuhiro2; Luo, Guangfu3; Wang, Lu3 |
刊名 | ADVANCED MATERIALS
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出版日期 | 2009-02-16 |
卷号 | 21期号:7页码:813-+ |
ISSN号 | 0935-9648 |
DOI | 10.1002/adma.200800703 |
英文摘要 | A facile scalable and low-cost gas-treatment method for selectively etching semiconductor single-walled carbon nanotubes (SWNTs) is developed. Using SO(3) gas as the etchant at a temperature of 400 degrees C, semiconductor SWNTs can be selectively and efficiently removed, and after this gas treatment samples enriched with metallic SWNTs can be obtained. |
语种 | 英语 |
WOS记录号 | WOS:000263737800013 |
出版者 | WILEY-V C H VERLAG GMBH |
源URL | [http://ir.iccas.ac.cn/handle/121111/68615] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Liu, Yunqi |
作者单位 | 1.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 2.Sony Corp, Mat Labs, Atsugi, Kanagawa 2430021, Japan 3.Peking Univ, Dept Phys, Mesoscop Phys Lab, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Zhang, Hongliang,Liu, Yunqi,Cao, Lingchao,et al. A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction[J]. ADVANCED MATERIALS,2009,21(7):813-+. |
APA | Zhang, Hongliang.,Liu, Yunqi.,Cao, Lingchao.,Wei, Dacheng.,Wang, Yu.,...&Gao, Zhengxiang.(2009).A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction.ADVANCED MATERIALS,21(7),813-+. |
MLA | Zhang, Hongliang,et al."A Facile, Low-Cost, and Scalable Method of Selective Etching of Semiconducting Single-Walled Carbon Nanotubes by a Gas Reaction".ADVANCED MATERIALS 21.7(2009):813-+. |
入库方式: OAI收割
来源:化学研究所
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