中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity

文献类型:期刊论文

作者Cao, Yang1; Wei, Zhongming2; Liu, Song1; Gan, Lin1; Guo, Xuefeng1; Xu, Wei2; Steigerwald, Michael L.3,4; Liu, Zhongfan1; Zhu, Daoben2
刊名ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
出版日期2010
卷号49期号:36页码:6319-6323
关键词Field-effect Transistors Graphene Molecular Devices Monolayers Photoresponsivity
ISSN号1433-7851
DOI10.1002/anie.201001683
语种英语
WOS记录号WOS:000281688700009
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/68843]  
专题中国科学院化学研究所
通讯作者Guo, Xuefeng
作者单位1.Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Inst Chem, Beijing 00190, Peoples R China
3.Columbia Univ, Dept Chem, New York, NY 10027 USA
4.Columbia Univ, Energy Frontiers Res Ctr, New York, NY 10027 USA
推荐引用方式
GB/T 7714
Cao, Yang,Wei, Zhongming,Liu, Song,et al. High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2010,49(36):6319-6323.
APA Cao, Yang.,Wei, Zhongming.,Liu, Song.,Gan, Lin.,Guo, Xuefeng.,...&Zhu, Daoben.(2010).High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,49(36),6319-6323.
MLA Cao, Yang,et al."High-Performance Langmuir-Blodgett Monolayer Transistors with High Responsivity".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 49.36(2010):6319-6323.

入库方式: OAI收割

来源:化学研究所

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