Thickness Measurement of Ultrathin SiO2 Layer on Si by Using XPS Standard Curve
文献类型：期刊论文
| 作者 | Zhao Zhi-juan1; Liu Fen1; Wang Hai2; Zhao Liang-zhong1; Yan Shou-ke1,3; Song Xiao-ping2 |
| 刊名 | SPECTROSCOPY AND SPECTRAL ANALYSIS
 |
| 出版日期 | 2010-06-01 |
| 卷号 | 30期号:6页码:1670-1673 |
| ISSN号 | 1000-0593 |
| 关键词 | X-ray Photoelectron Spectroscopy Silicon Oxides Thickness Measurement Standard Curve |
| DOI | 10.3964/j.issn.1000-0593(2010)06-1670-04 |
| 英文摘要 | A new method of standard curve analysis associated with X-ray photoelectron spectroscopy (XPS) is presented for measuring the thickness of ultrathin SiO2 layer on Si substrate. In this method, XPS spectra of series SiO2/Si standard samples with different known thicknesses of silicon oxides are firstly recorded, and then the ratios of Si2p peak heights corresponding to SiO2 and Si, viz. R=Hso(2)/Hs, are calculated. The known thicknesses of silicon oxides are plotted against the peak height ratios and an XPS standard curve is derived. Under the same experimental conditions, the samples with unknown thicknesses are measured by using XPS technique and then their thicknesses can be obtained from the XPS standard curve. The SiO2/Si standard samples were provided by authoritative lab with the advanced analytical equipments and rich experiences, and the oxide thicknesses were measured by multiple techniques. The present results show that the standard curve, plotted in terms of accuracy of the oxide thickness from the standard samples, can be used for the thickness measurement for ultrathin SiO2 on Si, and this method is valuable in practice owing to the swiftness, convenience and accuracy. |
| 语种 | 英语 |
| 出版者 | OFFICE SPECTROSCOPY & SPECTRAL ANALYSIS |
| WOS记录号 | WOS:000278580200049 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/69319]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu Fen |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China 2.Natl Inst Metrol PR China, Beijing 100013, Peoples R China 3.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing 100029, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao Zhi-juan,Liu Fen,Wang Hai,et al. Thickness Measurement of Ultrathin SiO2 Layer on Si by Using XPS Standard Curve[J]. SPECTROSCOPY AND SPECTRAL ANALYSIS,2010,30(6):1670-1673. |
| APA | Zhao Zhi-juan,Liu Fen,Wang Hai,Zhao Liang-zhong,Yan Shou-ke,&Song Xiao-ping.(2010).Thickness Measurement of Ultrathin SiO2 Layer on Si by Using XPS Standard Curve.SPECTROSCOPY AND SPECTRAL ANALYSIS,30(6),1670-1673. |
| MLA | Zhao Zhi-juan,et al."Thickness Measurement of Ultrathin SiO2 Layer on Si by Using XPS Standard Curve".SPECTROSCOPY AND SPECTRAL ANALYSIS 30.6(2010):1670-1673. |
入库方式： OAI收割
来源：化学研究所
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