Surface transfer hole doping of epitaxial graphene using MoO3 thin film
文献类型：期刊论文
| 作者 | Chen, Zhenyu1,2; Santoso, Iman1,3; Wang, Rui4; Xie, Lan Fei4; Mao, Hong Ying1; Huang, Han4; Wang, Yu Zhan4; Gao, Xing Yu1; Chen, Zhi Kuan5; Ma, Dongge2 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010-05-24 |
| 卷号 | 96期号:21 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3441263 |
| 英文摘要 | Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H-SiC(0001) via the deposition of MoO3 thin film on top. The large work function difference between EG and MoO3 facilitates electron transfer from EG to the MoO3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0x10(13) cm(-2), and places the Fermi level 0.38 eV below the graphene Dirac point. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3441263] |
| 语种 | 英语 |
| WOS记录号 | WOS:000278183200057 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/69917]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Chen, Wei |
| 作者单位 | 1.Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China 3.Univ Gadjah Mada, Jurusan Fis, Yogyakarta, Indonesia 4.Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore 5.Inst Mat Res & Engn, Singapore 117602, Singapore |
| 推荐引用方式 GB/T 7714 | Chen, Zhenyu,Santoso, Iman,Wang, Rui,et al. Surface transfer hole doping of epitaxial graphene using MoO3 thin film[J]. APPLIED PHYSICS LETTERS,2010,96(21). |
| APA | Chen, Zhenyu.,Santoso, Iman.,Wang, Rui.,Xie, Lan Fei.,Mao, Hong Ying.,...&Chen, Wei.(2010).Surface transfer hole doping of epitaxial graphene using MoO3 thin film.APPLIED PHYSICS LETTERS,96(21). |
| MLA | Chen, Zhenyu,et al."Surface transfer hole doping of epitaxial graphene using MoO3 thin film".APPLIED PHYSICS LETTERS 96.21(2010). |
入库方式： OAI收割
来源：化学研究所
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