Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3
文献类型：期刊论文
| 作者 | Wang, Wei1,2; Ma, Dongge2 |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010-05-17 |
| 卷号 | 96期号:20 |
| 关键词 | Alumina Aluminium Nanoparticles Organic Field Effect Transistors Organic Semiconductors Semiconductor Storage Thin Film Transistors Tunnelling |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.3432667 |
| 英文摘要 | An organic thin-film transistor memory, based on the pentacene semiconductor/nanoparticle-Al floating-gate/Al2O3 tunneling layer, is demonstrated by a simple fabrication process. The floating-gate transistor exhibits significant hysteresis behaviors in current-voltage characteristics and these hysteresis loops size depends on the gate voltage sweeping range. The memory windows of 32.5, 50, and 67.5 V and the memory ratio of 13, 32, and 70 can be obtained by the writing/erasing pulse of +/- 40 V, +/- 50 V, and +/- 60 V, respectively. The charge storage mechanism is discussed well via holes inject or eject the floated gate by F-N tunneling. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432667] |
| 语种 | 英语 |
| WOS记录号 | WOS:000277969700064 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/70369]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Wei |
| 作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Grad Sch, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Wei,Ma, Dongge. Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3[J]. APPLIED PHYSICS LETTERS,2010,96(20). |
| APA | Wang, Wei,&Ma, Dongge.(2010).Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3.APPLIED PHYSICS LETTERS,96(20). |
| MLA | Wang, Wei,et al."Organic floating-gate transistor memory based on the structure of pentacene/nanoparticle-Al/Al2O3".APPLIED PHYSICS LETTERS 96.20(2010). |
入库方式： OAI收割
来源：化学研究所
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