中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets

文献类型:期刊论文

作者Li, Cheng; Hong, Guosong; Qi, Limin
刊名CHEMISTRY OF MATERIALS
出版日期2010-01-26
卷号22期号:2页码:476-481
ISSN号0897-4756
DOI10.1021/cm9031946
英文摘要A general nanosphere lithography (NSL) approach toward Facile fabrication of Free-standing large-area, high-quality nanonets was developed, which was based oil a floating colloidal crystal monolayer (CCM) mask at the gas/liquid interface for materials deposition via interfacial reactions. The hole size. spacing, and thickness of the highly ordered nanonets. which showed interesting photonic properties, can he readily adjusted. This NSL approach at the gas/liquid interface can be easily extended to fabricate large-area ordered nanonets of various metal sulfides, metals as well as inorganic minerals. Furthermore, a variety of ordered gold nanoarrays with Unusual patterns were produced by using nanonet bilayers as unique deposition masks, suggesting that the obtained transferable, high-quality nanonets can function as versatile lithographic masks to generate novel nanopatterns.
语种英语
WOS记录号WOS:000273580700026
出版者AMER CHEMICAL SOC
源URL[http://ir.iccas.ac.cn/handle/121111/70523]  
专题中国科学院化学研究所
通讯作者Qi, Limin
作者单位Peking Univ, BNLMS, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem, Beijing 100871, Peoples R China
推荐引用方式
GB/T 7714
Li, Cheng,Hong, Guosong,Qi, Limin. Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets[J]. CHEMISTRY OF MATERIALS,2010,22(2):476-481.
APA Li, Cheng,Hong, Guosong,&Qi, Limin.(2010).Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets.CHEMISTRY OF MATERIALS,22(2),476-481.
MLA Li, Cheng,et al."Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets".CHEMISTRY OF MATERIALS 22.2(2010):476-481.

入库方式: OAI收割

来源:化学研究所

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