Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets
文献类型:期刊论文
作者 | Li, Cheng; Hong, Guosong; Qi, Limin |
刊名 | CHEMISTRY OF MATERIALS
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出版日期 | 2010-01-26 |
卷号 | 22期号:2页码:476-481 |
ISSN号 | 0897-4756 |
DOI | 10.1021/cm9031946 |
英文摘要 | A general nanosphere lithography (NSL) approach toward Facile fabrication of Free-standing large-area, high-quality nanonets was developed, which was based oil a floating colloidal crystal monolayer (CCM) mask at the gas/liquid interface for materials deposition via interfacial reactions. The hole size. spacing, and thickness of the highly ordered nanonets. which showed interesting photonic properties, can he readily adjusted. This NSL approach at the gas/liquid interface can be easily extended to fabricate large-area ordered nanonets of various metal sulfides, metals as well as inorganic minerals. Furthermore, a variety of ordered gold nanoarrays with Unusual patterns were produced by using nanonet bilayers as unique deposition masks, suggesting that the obtained transferable, high-quality nanonets can function as versatile lithographic masks to generate novel nanopatterns. |
语种 | 英语 |
WOS记录号 | WOS:000273580700026 |
出版者 | AMER CHEMICAL SOC |
源URL | [http://ir.iccas.ac.cn/handle/121111/70523] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Qi, Limin |
作者单位 | Peking Univ, BNLMS, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Li, Cheng,Hong, Guosong,Qi, Limin. Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets[J]. CHEMISTRY OF MATERIALS,2010,22(2):476-481. |
APA | Li, Cheng,Hong, Guosong,&Qi, Limin.(2010).Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets.CHEMISTRY OF MATERIALS,22(2),476-481. |
MLA | Li, Cheng,et al."Nanosphere Lithography at the Gas/Liquid Interface: A General Approach toward Free-Standing High-Quality Nanonets".CHEMISTRY OF MATERIALS 22.2(2010):476-481. |
入库方式: OAI收割
来源:化学研究所
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