Fabrication of a 256-bits organic memory by soft x-ray lithography
文献类型：期刊论文
| 作者 | Liu Xing-Hua1; Lu Wen-Sheng2; Ji Zhuo-Yu1; Tu De-Yu1; Zhu Xiao-Li1; Xie Chang-Qing1; Liu Ming1 |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2010-05-01 |
| 卷号 | 19期号:5 |
| 关键词 | Molecular Memory Crossbar Array Soft X-ray Lithography Electron Beam Lithography |
| ISSN号 | 1674-1056 |
| DOI | 10.1088/1674-1056/19/5/057204 |
| 英文摘要 | This paper reports a procedure of soft x-ray lithography for the fabrication of an organic crossbar structure. Electron beam lithography is employed to fabricate the mask for soft x-ray lithography, with direct writing technology to the lithograph positive resist and polymethyl methacrylate on the polyimide film. Then Au is electroplated on the polyimide film. Hard contact mode exposure is used in x-ray lithography to transfer the graph from the mask to the wafer. The 256-bits organic memory is achieved with the critical dimension of 250 nm. |
| 语种 | 英语 |
| WOS记录号 | WOS:000277372200073 |
| 出版者 | IOP PUBLISHING LTD |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/70565]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu Ming |
| 作者单位 | 1.Chinese Acad Sci, Microfabricat & Nanotechnol Lab, Inst Microelect, Beijing 100029, Peoples R China 2.Chinese Acad Sci, Key Lab Colloid & Interface Sci, Ctr Mol Sci, Inst Chem, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu Xing-Hua,Lu Wen-Sheng,Ji Zhuo-Yu,et al. Fabrication of a 256-bits organic memory by soft x-ray lithography[J]. CHINESE PHYSICS B,2010,19(5). |
| APA | Liu Xing-Hua.,Lu Wen-Sheng.,Ji Zhuo-Yu.,Tu De-Yu.,Zhu Xiao-Li.,...&Liu Ming.(2010).Fabrication of a 256-bits organic memory by soft x-ray lithography.CHINESE PHYSICS B,19(5). |
| MLA | Liu Xing-Hua,et al."Fabrication of a 256-bits organic memory by soft x-ray lithography".CHINESE PHYSICS B 19.5(2010). |
入库方式： OAI收割
来源：化学研究所
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