中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping

文献类型:期刊论文

作者Zhai, Tianyou1,2,3; Ma, Ying3; Li, Liang1,2; Fang, Xiaosheng1,2; Liao, Meiyong4; Koide, Yasuo4; Yao, Jiannian3; Bando, Yoshio1,2; Golberg, Dmitri1,2
刊名JOURNAL OF MATERIALS CHEMISTRY
出版日期2010
卷号20期号:32页码:6630-6637
ISSN号0959-9428
DOI10.1039/c0jm01013h
英文摘要Highly ordered In2Se3 nanostructures with different morphologies were first fabricated via a simple and efficient thermal evaporation process. Through manipulating the growth driving force, the morphology of the In2Se3 nanostructures was varied from nanowire arrays, via nanotree arrays to nanowire bundles. Furthermore, the nanostructures were on-demand doped with sulfur by co-evaporating the dopant In2S3 precursor and In2Se3 powder during the growth. Electrical and photoelectrical studies based on individual undoped and doped In2Se3 nanowires revealed that sulfur doping leads to significant improvements in the transport and photoelectronic performances, such as enhancing the conductivity and improving the sensitivity to visible light. These excellent performances demonstrate that S-doped In2Se3 nanowires should offer great potential for next-generation device applications.
语种英语
WOS记录号WOS:000280656200007
出版者ROYAL SOC CHEMISTRY
源URL[http://ir.iccas.ac.cn/handle/121111/70989]  
专题中国科学院化学研究所
通讯作者Zhai, Tianyou
作者单位1.Natl Inst Mat Sci, ICYS, Tsukuba, Ibaraki 3050044, Japan
2.Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
3.Chinese Acad Sci, Inst Chem, BNLMS, Beijing 100190, Peoples R China
4.Natl Inst Mat Sci, Sensor Mat Ctr, Tsukuba, Ibaraki 3050044, Japan
推荐引用方式
GB/T 7714
Zhai, Tianyou,Ma, Ying,Li, Liang,et al. Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping[J]. JOURNAL OF MATERIALS CHEMISTRY,2010,20(32):6630-6637.
APA Zhai, Tianyou.,Ma, Ying.,Li, Liang.,Fang, Xiaosheng.,Liao, Meiyong.,...&Golberg, Dmitri.(2010).Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping.JOURNAL OF MATERIALS CHEMISTRY,20(32),6630-6637.
MLA Zhai, Tianyou,et al."Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur doping".JOURNAL OF MATERIALS CHEMISTRY 20.32(2010):6630-6637.

入库方式: OAI收割

来源:化学研究所

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