XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate
文献类型：期刊论文
| 作者 | Zhao Zhi-Juan; Liu Fen; Zhao Liang-Zhong |
| 刊名 | ACTA PHYSICO-CHIMICA SINICA
 |
| 出版日期 | 2010-11-01 |
| 卷号 | 26期号:11页码:3030-3034 |
| 关键词 | Si Substrate Silicon Oxide Film Nanosize Thickness Size Effect X-ray Photoelectron Spectroscopy Electron Binding Energy Valence Band Spectrum Extra-atomic Relaxation |
| ISSN号 | 1000-6818 |
| DOI | 10.3866/PKU.WHXB20101111 |
| 英文摘要 | X-ray photoelectron spectroscopy (XPS) was used to record the Si 2p and valence band spectra for a series of ultrathin SiO2 on Si substrate with the oxide thickness (d) ranging from 1.45 to 7.2 nm. The thicknesses of these samples were measured precisely in the international key comparison. The results show that the samples with the oxide thickness of d<2 nm have a lower Si 2p binding energy (E-B). This has been attributed to the extra. atomic relaxation provided by both the polarization of the neighboring atoms of SiO2 and charge transfer from atoms of the Si substrate to the core holes created by photoionization (the screening distance was about (2.5 +/- 0.6) nm). The E-B of Si 2p increased when d>3 nm and in this case extra. atomic screening was provided by the polarization of the neighboring atoms of SiO2. The sample with a smaller d showed a higher E-B for Si 2p. The valence band structure is also related to the thickness nanosize effect. The samples with d<2 nm show a higher relative peak intensity of the O 2p non. bonding electrons and lower peak intensities for the O 2p-Si 3p and O 2p-Si 3s bonding electrons from SiO2. |
| 语种 | 英语 |
| WOS记录号 | WOS:000283648000025 |
| 出版者 | PEKING UNIV PRESS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/71093]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu Fen |
| 作者单位 | Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhao Zhi-Juan,Liu Fen,Zhao Liang-Zhong. XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate[J]. ACTA PHYSICO-CHIMICA SINICA,2010,26(11):3030-3034. |
| APA | Zhao Zhi-Juan,Liu Fen,&Zhao Liang-Zhong.(2010).XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate.ACTA PHYSICO-CHIMICA SINICA,26(11),3030-3034. |
| MLA | Zhao Zhi-Juan,et al."XPS Study of the Thickness Nanosize Effect for Ultrathin SiO2 on Si Substrate".ACTA PHYSICO-CHIMICA SINICA 26.11(2010):3030-3034. |
入库方式： OAI收割
来源：化学研究所
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