Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors
文献类型：期刊论文
| 作者 | Hu, Yunbin1; Gao, Xike1; Di, Chong-an2; Yang, Xiaodi3; Zhang, Feng1; Liu, Yunqi2; Li, Hongxiang1; Zhu, Daoben1,2 |
| 刊名 | CHEMISTRY OF MATERIALS
 |
| 出版日期 | 2011-03-08 |
| 卷号 | 23期号:5页码:1204-1215 |
| 关键词 | Characterization Of Materials Electronic Materials Semiconductors |
| ISSN号 | 0897-4756 |
| DOI | 10.1021/cm102850j |
| 英文摘要 | Four families of core-expanded naphthalene diiinide (NDI) derivatives were designed and synthesized, namely, NDI-DTYM2 (1-7, of which 1 and 2 were previously reported), NDI-DTDCN2 (8 and 9), NDI-DTYCA2 (10 and 11), and NDI-DCT2 (12), where the NDI core fuses two 2-(1,3-dithiol-2-ylidene)malonitrile (DTYM) groups, two 1,4-dithiine-2,3-dicarbonitrile (DTDCN) groups, two alkyl 2-(1,3-dithiol-2-ylidene)cyanoacetate (DTYCA) groups, and two 2,3-dicyanothiophenes (DCT), respectively. The NDI cores of the present compounds bear the branched N-alkyl substituents with the carbon atom numbers from 12 to 24, which guarantees good material solubility. The solution-processed, bottom-gate organic thin film transistors based on compounds 3-12 operate well in air with the electron mobility ranging from similar to 10(-6) to 0.26 cm(2) V(-1) s(-1), depending on the nature of the branched N-alkyl substituent and the pi-backbone structure. new |
| 语种 | 英语 |
| WOS记录号 | WOS:000287767200019 |
| 出版者 | AMER CHEMICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/71643]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Gao, Xike |
| 作者单位 | 1.Chinese Acad Sci, Shanghai Inst Organ Chem, Mat Sci Lab, Shanghai 200032, Peoples R China 2.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 3.Fudan Univ, Adv Mat Lab, Shanghai 200433, Peoples R China |
| 推荐引用方式 GB/T 7714 | Hu, Yunbin,Gao, Xike,Di, Chong-an,et al. Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors[J]. CHEMISTRY OF MATERIALS,2011,23(5):1204-1215. |
| APA | Hu, Yunbin.,Gao, Xike.,Di, Chong-an.,Yang, Xiaodi.,Zhang, Feng.,...&Zhu, Daoben.(2011).Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors.CHEMISTRY OF MATERIALS,23(5),1204-1215. |
| MLA | Hu, Yunbin,et al."Core-Expanded Naphthalene Diimides Fused with Sulfur Heterocycles and End-Capped with Electron-Withdrawing Groups for Air-Stable Solution-Processed n-Channel Organic Thin Film Transistors".CHEMISTRY OF MATERIALS 23.5(2011):1204-1215. |
入库方式： OAI收割
来源：化学研究所
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