Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes
文献类型：期刊论文
| 作者 | Yi, Mingdong1,2; Zhao, Litao1,2,3; Fan, Quli1,2; Xia, Xianhai1,2; Ai, Wei1,2; Xie, Linghai1,2; Liu, Xiangmei1,2; Shi, Naien; Wang, Wenjun3; Wang, Yanping4 |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011-09-15 |
| 卷号 | 110期号:6 |
| ISSN号 | 0021-8979 |
| DOI | 10.1063/1.3639287 |
| 英文摘要 | We demonstrated write-once-read-many-times (WORM) memory devices based on graphene oxide (GO) film sandwiched between ITO and LiF/Al electrode. The devices showed irreversible electrical transition from the low conductivity (OFF) state to the high conductivity (ON) state and the ON/OFF current ratio between the conductivities of two states was over 5.7 x 10(4). The results of I-V data, AFM and SEM images indicated that the WORM memory characteristics of GO diodes were mainly attributed to charge trapping at GO layers and interfacial properties between GO and LiF/Al electrode. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3639287] |
| 语种 | 英语 |
| WOS记录号 | WOS:000295619300064 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/71803]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yi, Mingdong |
| 作者单位 | 1.NUPT, KLOEID, Nanjing 210046, Peoples R China 2.NUPT, IAM, Nanjing 210046, Peoples R China 3.Liaocheng Univ, Sch Phys Sci & Informat Technol, Liaocheng 252059, Shandong, Peoples R China 4.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Yi, Mingdong,Zhao, Litao,Fan, Quli,et al. Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes[J]. JOURNAL OF APPLIED PHYSICS,2011,110(6). |
| APA | Yi, Mingdong.,Zhao, Litao.,Fan, Quli.,Xia, Xianhai.,Ai, Wei.,...&Huang, Wei.(2011).Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes.JOURNAL OF APPLIED PHYSICS,110(6). |
| MLA | Yi, Mingdong,et al."Electrical characteristics and carrier transport mechanisms of write-once-read-many-times memory elements based on graphene oxide diodes".JOURNAL OF APPLIED PHYSICS 110.6(2011). |
入库方式： OAI收割
来源：化学研究所
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