中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors

文献类型:期刊论文

作者Singh, Kamaljit1; Sharma, Amit1; Zhang, Jing2; Xu, Wei2; Zhu, Daoben2
刊名CHEMICAL COMMUNICATIONS
出版日期2011
卷号47期号:3页码:905-907
ISSN号1359-7345
DOI10.1039/c0cc03974h
英文摘要New, neutral, meso-substituted tetrathia[22]annulene[2,1,2,1] aromatic macrocyclic architectures display p-type semiconductor behaviour and constitute efficacious molecular field-effect transistors with reproducible bulk-like carrier mobility (as high as 0.63 cm(2) V-1 S-1) on highly crystalline thin films deposited on octadecyltrichlorosilane modified SiO2.
语种英语
WOS记录号WOS:000285515200015
出版者ROYAL SOC CHEMISTRY
源URL[http://ir.iccas.ac.cn/handle/121111/71823]  
专题中国科学院化学研究所
通讯作者Singh, Kamaljit
作者单位1.Guru Nanak Dev Univ, Dept Appl Chem Sci & Technol, Organ Synth Lab, Amritsar 143005, Punjab, India
2.Acad Sci, Inst Chem, Lab Organ Solids, Beijing Natl Lab Mol Sci,CAS Key, Beijing 100080, Peoples R China
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GB/T 7714
Singh, Kamaljit,Sharma, Amit,Zhang, Jing,et al. New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors[J]. CHEMICAL COMMUNICATIONS,2011,47(3):905-907.
APA Singh, Kamaljit,Sharma, Amit,Zhang, Jing,Xu, Wei,&Zhu, Daoben.(2011).New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors.CHEMICAL COMMUNICATIONS,47(3),905-907.
MLA Singh, Kamaljit,et al."New sulfur bridged neutral annulenes. Structure, physical properties and applications in organic field-effect transistors".CHEMICAL COMMUNICATIONS 47.3(2011):905-907.

入库方式: OAI收割

来源:化学研究所

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