中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices

文献类型:期刊论文

作者Jiang, Hui1,2; Zhao, Huaping2; Zhang, Keke K.1; Chen, Xiaodong1; Kloc, Christian1; Hu, Wenping2
刊名ADVANCED MATERIALS
出版日期2011-11-16
卷号23期号:43页码:5075-5080
ISSN号0935-9648
DOI10.1002/adma.201102975
语种英语
出版者WILEY-BLACKWELL
WOS记录号WOS:000297042600014
源URL[http://ir.iccas.ac.cn/handle/121111/71901]  
专题中国科学院化学研究所
通讯作者Jiang, Hui
作者单位1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China
推荐引用方式
GB/T 7714
Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,et al. High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices[J]. ADVANCED MATERIALS,2011,23(43):5075-5080.
APA Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,Chen, Xiaodong,Kloc, Christian,&Hu, Wenping.(2011).High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices.ADVANCED MATERIALS,23(43),5075-5080.
MLA Jiang, Hui,et al."High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices".ADVANCED MATERIALS 23.43(2011):5075-5080.

入库方式: OAI收割

来源:化学研究所

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