High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices
文献类型:期刊论文
作者 | Jiang, Hui1,2; Zhao, Huaping2; Zhang, Keke K.1; Chen, Xiaodong1; Kloc, Christian1; Hu, Wenping2 |
刊名 | ADVANCED MATERIALS |
出版日期 | 2011-11-16 |
卷号 | 23期号:43页码:5075-5080 |
ISSN号 | 0935-9648 |
DOI | 10.1002/adma.201102975 |
语种 | 英语 |
出版者 | WILEY-BLACKWELL |
WOS记录号 | WOS:000297042600014 |
源URL | [http://ir.iccas.ac.cn/handle/121111/71901] |
专题 | 中国科学院化学研究所 |
通讯作者 | Jiang, Hui |
作者单位 | 1.Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore 2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,et al. High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices[J]. ADVANCED MATERIALS,2011,23(43):5075-5080. |
APA | Jiang, Hui,Zhao, Huaping,Zhang, Keke K.,Chen, Xiaodong,Kloc, Christian,&Hu, Wenping.(2011).High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices.ADVANCED MATERIALS,23(43),5075-5080. |
MLA | Jiang, Hui,et al."High-Performance Organic Single-Crystal Field-Effect Transistors of Indolo[3,2-b]carbazole and Their Potential Applications in Gas Controlled Organic Memory Devices".ADVANCED MATERIALS 23.43(2011):5075-5080. |
入库方式: OAI收割
来源:化学研究所
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