Integration of Self-Assembled Redox Molecules in Flash Memory Devices
文献类型：期刊论文
| 作者 | Shaw, Jonathan1; Zhong, Yu-Wu2; Hughes, Kevin J.3; Hou, Tuo-Hung4; Raza, Hassan5; Rajwade, Shantanu1; Bellfy, Julie6; Engstrom, James R.3; Abruna, Hector D.1; Kan, Edwin Chihchuan1 |
| 刊名 | IEEE TRANSACTIONS ON ELECTRON DEVICES
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 58期号:3页码:826-834 |
| 关键词 | Coulomb Blockade Effect High-kappa Dielectric Nonvolatile Memory Devices Reduction-oxidation (Redox)-active Molecules Self-assembled Monolayer (Sam) |
| ISSN号 | 0018-9383 |
| DOI | 10.1109/TED.2010.2097266 |
| 英文摘要 | Self-assembled monolayers (SAMs) of either ferrocenecarboxylic acid or 5-(4-Carboxyphenyl)-10,15,20-triphenylporphyrin-Co(II) (CoP) with a high-kappa dielectric were integrated into the Flash memory gate stack. The molecular reduction-oxidation (redox) states are used as charge storage nodes to reduce charging energy and memory window variations. Through the program/erase operations over tunneling barriers, the device structure also provides a unique capability to measure the redox energy without strong orbital hybridization of metal electrodes in direct contact. Asymmetric charge injection behavior was observed, which can be attributed to the Fermi-level pinning between the molecules and the high-kappa dielectric. With increasing redox molecule density in the SAM, the memory window exhibits a saturation trend. Three programmable molecular orbital states, i.e., CoP(0), CoP(1-), and CoP(2-), can be experimentally observed through a charge-based nonvolatile memory structure at room temperature. The electrostatics is determined by the alignment between the highest occupied or the lowest unoccupied molecular orbital (HOMO or LUMO, respectively) energy levels and the charge neutrality level of the surrounding dielectric. Engineering the HOMO-LUMO gap with different redox molecules can potentially realize a multibit memory cell with less variation. |
| 语种 | 英语 |
| WOS记录号 | WOS:000287665700035 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/73081]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Shaw, Jonathan |
| 作者单位 | 1.Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA 2.Chinese Acad Sci, Inst Chem, Lab Photochem, Beijing 100864, Peoples R China 3.Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA 4.Natl Chiao Tung Univ, Sch Elect & Comp Engn, Hsinchu 300, Taiwan 5.Univ Iowa, Coll Engn, Iowa City, IA 52242 USA 6.Villanova Univ, Villanova, PA 19085 USA |
| 推荐引用方式 GB/T 7714 | Shaw, Jonathan,Zhong, Yu-Wu,Hughes, Kevin J.,et al. Integration of Self-Assembled Redox Molecules in Flash Memory Devices[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2011,58(3):826-834. |
| APA | Shaw, Jonathan.,Zhong, Yu-Wu.,Hughes, Kevin J..,Hou, Tuo-Hung.,Raza, Hassan.,...&Kan, Edwin Chihchuan.(2011).Integration of Self-Assembled Redox Molecules in Flash Memory Devices.IEEE TRANSACTIONS ON ELECTRON DEVICES,58(3),826-834. |
| MLA | Shaw, Jonathan,et al."Integration of Self-Assembled Redox Molecules in Flash Memory Devices".IEEE TRANSACTIONS ON ELECTRON DEVICES 58.3(2011):826-834. |
入库方式： OAI收割
来源：化学研究所
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