Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device
文献类型:期刊论文
作者 | Ren, Zhongjie2; Chen, Zhize3; Fu, Wenxin3; Zhang, Rongben3; Shen, Fangzhong1; Wang, Feng2; Ma, Yuguang1; Yan, Shouke2 |
刊名 | JOURNAL OF MATERIALS CHEMISTRY
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出版日期 | 2011 |
卷号 | 21期号:30页码:11306-11311 |
ISSN号 | 0959-9428 |
DOI | 10.1039/c1jm11087j |
英文摘要 | A ladder polysilsesquioxane with side chain 3-methyl-1,5-diphenylbenzene groups (Tp-LPSQ) is synthesized successfully and confirmed by the MALDI-TOF MS, (29)Si-NMR and (1)H-NMR. DSC, TGA, AFM and PL spectra reveal its good film-forming property, high thermal and morphological stability and good miscibility to the dopant FIrpic. In addition, it also shows a high triplet energy and a wide bandgap. Thus Tp-LPSQ may act as a host for the blue light emitting iridium complex FIrpic. The electrophosphorescent device based on Tp-LPSQ as the active layer exhibits typical blue emission and the performance of device is superior to other reported polymeric host materials. |
语种 | 英语 |
WOS记录号 | WOS:000292974400037 |
出版者 | ROYAL SOC CHEMISTRY |
源URL | [http://ir.iccas.ac.cn/handle/121111/73197] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Ma, Yuguang |
作者单位 | 1.Jilin Univ, State Key Lab Supramol Struct & Mat, Changchun 130023, Peoples R China 2.Beijing Univ Chem Technol, State Key Lab Chem Resource Engn, Beijing, Peoples R China 3.Chinese Acad Sci, Inst Chem, BNLMS, Lab Polymer Sci & Mat, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Ren, Zhongjie,Chen, Zhize,Fu, Wenxin,et al. Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device[J]. JOURNAL OF MATERIALS CHEMISTRY,2011,21(30):11306-11311. |
APA | Ren, Zhongjie.,Chen, Zhize.,Fu, Wenxin.,Zhang, Rongben.,Shen, Fangzhong.,...&Yan, Shouke.(2011).Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device.JOURNAL OF MATERIALS CHEMISTRY,21(30),11306-11311. |
MLA | Ren, Zhongjie,et al."Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device".JOURNAL OF MATERIALS CHEMISTRY 21.30(2011):11306-11311. |
入库方式: OAI收割
来源:化学研究所
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