Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si
文献类型：期刊论文
| 作者 | Liu, Fen1; Zhao, Zhijuan1; Zhao, Liangzhong1; Wang, Hai2 |
| 刊名 | SURFACE AND INTERFACE ANALYSIS
 |
| 出版日期 | 2011-07-01 |
| 卷号 | 43期号:7页码:1015-1017 |
| ISSN号 | 0142-2421 |
| 关键词 | Intermediate Oxide Silicon Dioxide Elemental Quantitative Analysis Layer Thickness Measurement Xps |
| DOI | 10.1002/sia.3671 |
| 英文摘要 | The thicknesses of intermediate oxides at the interface between ultrathin SiO2 and Si substrates have been measured via XPS elemental quantitative analysis for some SiO2/Si(100) and SiO2/Si(111) samples with the silicon oxide thickness less than 2 nm. The measurements involve XPS determination of the Si relative atomic ratio, calculation of Si atomic densities for the intermediate oxide, etc. and then the intermediate oxide thicknesses and the number of monolayers are obtained by referencing the thickness data from two international comparisons for these samples. The results show that the thickness of the intermediate oxides is in the range 0.14-0.16 nm with an average value of 0.15 nm. The number of monolayers for the intermediate oxides at the interface is less than one monolayer with an average value of 0.60. In the present work, there are a series of approximations. By making these approximations many parameters, including L and R-0, used in the conventional calculation method are removed to give a simpler equation, which is valid when the thicknesses of SiO2 overlayer and the intermediate oxides are very small. This, therefore, appears to be a simple and quick method to obtain approximate oxide thicknesses of modest accuracy. The present work does not in any way replace or improve on Eqns (2-6) cited in the text. Copyright (C) 2010 John Wiley & Sons, Ltd. |
| 语种 | 英语 |
| 出版者 | WILEY-BLACKWELL |
| WOS记录号 | WOS:000291600900001 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/73235]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Liu, Fen |
| 作者单位 | 1.Chinese Acad Sci, Inst Chem, Beijing 100190, Peoples R China 2.Natl Inst Metrol, Beijing 100013, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, Fen,Zhao, Zhijuan,Zhao, Liangzhong,et al. Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si[J]. SURFACE AND INTERFACE ANALYSIS,2011,43(7):1015-1017. |
| APA | Liu, Fen,Zhao, Zhijuan,Zhao, Liangzhong,&Wang, Hai.(2011).Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si.SURFACE AND INTERFACE ANALYSIS,43(7),1015-1017. |
| MLA | Liu, Fen,et al."Considerations of the intermediate oxides via XPS elemental quantitative analysis for the thickness measurements of ultrathin SiO2 on Si".SURFACE AND INTERFACE ANALYSIS 43.7(2011):1015-1017. |
入库方式： OAI收割
来源：化学研究所
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