Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer
文献类型：期刊论文
| 作者 | Wang, Wei1; Ma, Dongge2 |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
 |
| 出版日期 | 2011-03-01 |
| 卷号 | 32期号:3页码:405-407 |
| 关键词 | Low Voltage Nonvolatile Memory Organic Thin-film Transistor (Otft) |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2010.2103297 |
| 英文摘要 | An organic nonvolatile thin-film transistor memory is demonstrated by an inset complex layer between the active layer and the gate dielectric layer, which is realized by heat treating a thin Al layer (2.5 nm) on polymer poly(methyl methacrylate co glycidyl methacrylate) in an oven. The memory window and the memory ratio have a prominent dependence on the V(GS) sweeping rate, with the largest values of 13.3 V and 2010 which can be obtained at the rate of -0.2 V/S. At a low programming/erasing voltage of +/- 15 V, the transistors exhibit excellent memory circle characteristics and long data retention property. At last, the possible operation mechanisms of present transistor memories are discussed. |
| 语种 | 英语 |
| WOS记录号 | WOS:000287658400061 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/73555]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wang, Wei |
| 作者单位 | 1.Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China 2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang, Wei,Ma, Dongge. Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer[J]. IEEE ELECTRON DEVICE LETTERS,2011,32(3):405-407. |
| APA | Wang, Wei,&Ma, Dongge.(2011).Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer.IEEE ELECTRON DEVICE LETTERS,32(3),405-407. |
| MLA | Wang, Wei,et al."Low-Voltage Organic Nonvolatile Thin-Film Transistor Memory Based on a P(MMA-GMA)-Al-O Complex Layer".IEEE ELECTRON DEVICE LETTERS 32.3(2011):405-407. |
入库方式： OAI收割
来源：化学研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。