Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gong, Q; Liang, JB; Xu, B; Ding, D; Li, HX; Jiang, C; Zhou, W; Liu, FQ; Wang, ZG; Qiu, XH |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 1998-09-01 |
| 卷号 | 192期号:3-4页码:376-380 |
| 关键词 | Nanometer Island Inas Molecular Beam Epitaxy Atomic Force Microscopy Quantum Dot |
| ISSN号 | 0022-0248 |
| 英文摘要 | Atomic force microscopy (AFM) measurements of nanometer-sized islands formed by 2 monolayers of InAs by molecular beam epitaxy have been carried out and the scan line of individual islands was extracted from raw AFM data for investigation. It is found that the base widths of nanometer-sized islands obtained by AFM are not reliable due to the finite size and shape of the contacting probe. A simple model is proposed to analyze the deviation of the measured value From the real value of the base width of InAs islands. (C) 1998 Elsevier Science B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000075840000003 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/74289]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Gong, Q |
| 作者单位 | 1.Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100082, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gong, Q,Liang, JB,Xu, B,et al. Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,1998,192(3-4):376-380. |
| APA | Gong, Q.,Liang, JB.,Xu, B.,Ding, D.,Li, HX.,...&Bai, CL.(1998).Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,192(3-4),376-380. |
| MLA | Gong, Q,et al."Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 192.3-4(1998):376-380. |
入库方式： OAI收割
来源：化学研究所
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