Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions
文献类型:期刊论文
| 作者 | Liu, JB; Han, CY; Zeng, R; Gao, Z; Zhu, QH |
| 刊名 | ACTA PHYSICO-CHIMICA SINICA
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| 出版日期 | 1999-10-01 |
| 卷号 | 15期号:10页码:883-889 |
| 关键词 | Binary Atomic Clusters Laser Ablation Laser Photodissociation Tof Mass Spectrometer Wade's Rule |
| ISSN号 | 1000-6818 |
| DOI | 10.3866/PKU.WHXB19991005 |
| 英文摘要 | The formation and photodissociation of group HV (Si, Ge, Sn, Pb)/P binary cluster ions, produced by laser ablation, were studied with a tandem TOF mass spectrometer, The stability of these cluster ions is influenced by their electronic and geometric structures, and the geometric stability becomes more important for heavier group IV /P cluster ions. Two types of binary clusters marked with the magic numbers were observed: one type of magic clusters may be explained by the Wade's rule, in which P atom either attaches as electron-donating ligand to the close-skeleton of group IV atoms, or joins the close-skeleton directly; another type of magic clusters are isoelectronic with magic species of neutral group IV clusters or P clusters. The possible structures of magic cluster ions were studied by ab initio calculation and the Wade's rule. |
| 语种 | 英语 |
| WOS记录号 | WOS:000083087800005 |
| 出版者 | PEKING UNIV PRESS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/74817] ![]() |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Gao, Z |
| 作者单位 | Inst Chem, State Key Lab Mol React Dynam, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Liu, JB,Han, CY,Zeng, R,et al. Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions[J]. ACTA PHYSICO-CHIMICA SINICA,1999,15(10):883-889. |
| APA | Liu, JB,Han, CY,Zeng, R,Gao, Z,&Zhu, QH.(1999).Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions.ACTA PHYSICO-CHIMICA SINICA,15(10),883-889. |
| MLA | Liu, JB,et al."Formation, photodissociation and structures of Si, Ge, Sn, Pb/P binary atomic cluster ions".ACTA PHYSICO-CHIMICA SINICA 15.10(1999):883-889. |
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来源:化学研究所
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