Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films
文献类型：期刊论文
| 作者 | Yanagisawa, M; Jiang, L; Tryk, DA; Hashimoto, K; Fujishima, A |
| 刊名 | DIAMOND AND RELATED MATERIALS
 |
| 出版日期 | 1999-11-01 |
| 卷号 | 8期号:11页码:2059-2063 |
| 关键词 | Boron Diamond Films Doping Electrochemistry Homoepitaxy Morphology Surfaces |
| ISSN号 | 0925-9635 |
| 英文摘要 | Highly boron-doped diamond films were grown on (100) diamond substrates that were mechanically repolished at an off-axis angle of 4 degrees with respect to the (100) surface, tilted toward the [110] direction. The surface morphology and crystallinity were examined with atomic force microscopy, and it was found that the deposited surfaces have high crystallinity, with steps running parallel to the [110] direction. The terrace width was similar to 30 nm. Atomic resolution images obtained on these terraces showed a disordered atomic arrangement, with no evidence for the 2 x 1 or 1 x 2 reconstruction usually observed for non-doped samples, suggesting that the high level of boron doping affects the surface structure. The electrochemical behavior of the films showed a wide working potential window and low capacitance. (C) 1999 Elsevier Science S.A. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000084591500009 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/75367]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Fujishima, A |
| 作者单位 | 1.Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan 2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China 3.Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan |
| 推荐引用方式 GB/T 7714 | Yanagisawa, M,Jiang, L,Tryk, DA,et al. Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films[J]. DIAMOND AND RELATED MATERIALS,1999,8(11):2059-2063. |
| APA | Yanagisawa, M,Jiang, L,Tryk, DA,Hashimoto, K,&Fujishima, A.(1999).Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films.DIAMOND AND RELATED MATERIALS,8(11),2059-2063. |
| MLA | Yanagisawa, M,et al."Surface morphology and electrochemical properties of highly boron-doped homoepitaxial diamond films".DIAMOND AND RELATED MATERIALS 8.11(1999):2059-2063. |
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来源：化学研究所
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