Rectifying effect of polyaniline(PANI)/n-type porous silicone heterojunction
文献类型：期刊论文
| 作者 | Wan, MX; Li, YM |
| 刊名 | CHINESE JOURNAL OF POLYMER SCIENCE
 |
| 出版日期 | 1999 |
| 卷号 | 17期号:1页码:49-55 |
| 关键词 | Polyaniline(Pani) Porous Silicon(Ps) Rectifying Effect Heterojunction |
| ISSN号 | 0256-7679 |
| 英文摘要 | Heterojunctions between polyaniline (PANI) and n-type porous silicon (PS), Al/PS-PANI/Au cell, were fabricated, and the rectifying parameters of this heterojunction diode were measured as a function of the preparation conditions of PANI and PS, the electronic structure of PANI as well as cell structure. The rectifying parameters of Al/PS-PANI/Au cell were determined to be gamma = 1.8x10(1) similar to 1.0x10(5) for the rectifying ratio at 3V, n = 3 similar to 12 for the ideal factor, j(0) = 8.0x10(-5) similar to 5.6x10(-2) mA/cm(2) for the reversed saturated current density, and phi(0) = 0.67 similar to 0.83 V for the barrier height, respectively. The best rectifying heterojunction diode made between PANI and n-type PS with higher rectifying factor (gamma = 1.0x10(5) at 3V), output current (>1500 mA/cm(2) at 3V) and lower ideal factor (n = 3.3) was obtained by preventing the oxidation of PS before evaporating Al electrode. |
| 语种 | 英语 |
| WOS记录号 | WOS:000080390700007 |
| 出版者 | SPRINGER-VERLAG SINGAPORE PTE LTD |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/75383]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Wan, MX |
| 作者单位 | Chinese Acad Sci, Inst Chem, Organ Solid Lab, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wan, MX,Li, YM. Rectifying effect of polyaniline(PANI)/n-type porous silicone heterojunction[J]. CHINESE JOURNAL OF POLYMER SCIENCE,1999,17(1):49-55. |
| APA | Wan, MX,&Li, YM.(1999).Rectifying effect of polyaniline(PANI)/n-type porous silicone heterojunction.CHINESE JOURNAL OF POLYMER SCIENCE,17(1),49-55. |
| MLA | Wan, MX,et al."Rectifying effect of polyaniline(PANI)/n-type porous silicone heterojunction".CHINESE JOURNAL OF POLYMER SCIENCE 17.1(1999):49-55. |
入库方式： OAI收割
来源：化学研究所
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