Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method
文献类型：期刊论文
| 作者 | Xie, DT; Wu, JG; Ma, G; Yan, WF; Zhou, WJ; Xu, GX; Xu, DF; Tao, J; Qin, GG |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 1999-09-01 |
| 卷号 | 48期号:9页码:1773-1780 |
| ISSN号 | 1000-3290 |
| 英文摘要 | By sol-gel process and appropriate heat treatment, Tb3+-doped light-emitting films were prepared on the silicon bases. The structural changes of the xerogels and the fluorescence properties of the Tb3+ ions doped were studied by photoluminescence, Fourier transformed infrared spectroscopy, atom force microscope, differential thermal analysis and thermal gravimetry analysis methods. The results show that the films doped with Tb3+ ions can produce photoluminescence at 545 nm at room temperature after 400 degrees C heating-treatment, and have good properties in 10(-6) m level. The concentration of the Tb3+ ions doped reached 10(19)/cm(3). |
| 语种 | 英语 |
| WOS记录号 | WOS:000082386800028 |
| 出版者 | CHINESE PHYSICAL SOC |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/75555]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Xie, DT |
| 作者单位 | 1.Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Beijing 100871, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China 3.Peking Univ, Dept Phys, Beijing 100871, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xie, DT,Wu, JG,Ma, G,et al. Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method[J]. ACTA PHYSICA SINICA,1999,48(9):1773-1780. |
| APA | Xie, DT.,Wu, JG.,Ma, G.,Yan, WF.,Zhou, WJ.,...&Qin, GG.(1999).Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method.ACTA PHYSICA SINICA,48(9),1773-1780. |
| MLA | Xie, DT,et al."Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method".ACTA PHYSICA SINICA 48.9(1999):1773-1780. |
入库方式： OAI收割
来源：化学研究所
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