Kelvin probe force microscopic study of anodically and cathodically doped poly-3-methylthiophene
文献类型：期刊论文
| 作者 | Semenikhin, OA; Jiang, L; Hashimoto, K; Fujishima, A |
| 刊名 | SYNTHETIC METALS
 |
| 出版日期 | 2000-04-03 |
| 卷号 | 110期号:2页码:115-122 |
| 关键词 | Electrochemical Atomic Force Microscopy Kelvin Probe Force Microscopy Poly-3-methylthiophene Conducting Polymers Doping-level Distribution Microheterogeneity Morphology |
| ISSN号 | 0379-6779 |
| 英文摘要 | The doping-level distribution and surface morphology of thin films of p- and n-doped poly-3-methylthiophene (P3MT) deposited onto highly oriented pyrolytic graphite (HOPG) were characterized on a microscopic scale by using Kelvin probe force microscopy (KFM) and in situ atomic force microscopy (ECAFM) techniques. Two different types of surface structures were found on different sites of the polymer surface, one of them representing relatively amorphous polymer globules, and the other highly crystalline polymer grains. For the two structures, in both the p- and n-doping processes, the doping-level distribution was again found to be directly related to the polymer surface morphology, as was the case for p-doped polybithiophene (PBT) [O.A. Semenikhin, L. Jiang, T. Iyoda, K. Hashimoto, A. Fujishima, J. Phys. Chem. 100 (1996) 18603; O.A. Semenikhin, L. Jiang, T. Iyoda, K. Hashimoto, A. Fujishima, Electrochim. Acta 42 (1997) 3321]. At the same time, the relatively amorphous structure featured a higher degree of microheterogeneity: the observed polymer granules featured both oxidized and reduced regions. The crystalline grains of the second structure were more uniformly doped. However, in the cathodic doping, some of these grains remained undoped or even p-doped. (C) 2000 Published by Elsevier Science S.A. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000085946300003 |
| 出版者 | ELSEVIER SCIENCE SA |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/76541]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Fujishima, A |
| 作者单位 | 1.Univ Tokyo, Sch Engn, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan 2.Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan 3.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China 4.Russian Acad Sci, AN Frumkin Electrochem Inst, Moscow 117071, Russia |
| 推荐引用方式 GB/T 7714 | Semenikhin, OA,Jiang, L,Hashimoto, K,et al. Kelvin probe force microscopic study of anodically and cathodically doped poly-3-methylthiophene[J]. SYNTHETIC METALS,2000,110(2):115-122. |
| APA | Semenikhin, OA,Jiang, L,Hashimoto, K,&Fujishima, A.(2000).Kelvin probe force microscopic study of anodically and cathodically doped poly-3-methylthiophene.SYNTHETIC METALS,110(2),115-122. |
| MLA | Semenikhin, OA,et al."Kelvin probe force microscopic study of anodically and cathodically doped poly-3-methylthiophene".SYNTHETIC METALS 110.2(2000):115-122. |
入库方式： OAI收割
来源：化学研究所
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