Influence of excess S2- ion on the interfacial photocatalysis in superfine CdS system and band-potential matching
文献类型：期刊论文
| 作者 | Chen, DW; Liu, YQ; Yi, XY; Xu, GZ |
| 刊名 | ACTA PHYSICO-CHIMICA SINICA
 |
| 出版日期 | 2001-09-01 |
| 卷号 | 17期号:9页码:781-787 |
| 关键词 | Cds Superfine Particles Esr Flat Potential Electron Transfer Band-potential Matching |
| ISSN号 | 1000-6818 |
| DOI | 10.3866/PKU.WHXB20010904 |
| 英文摘要 | The influence of S2- ion and its concentration upon the photoinduced electron transfer and red-ox reaction of substrates on the surface of modified US colloid have been studied by means of ESR technique. The experimental results show that the existence of S2- ion with high concentration is advantageous to the interfacial photoreduction reaction and may restrain the photooxidation reaction. If the red-ox potential E-0 of the substrate is negative, photoreduction reaction is impossible to occur in the system with low concentration of S2- ion, but it can take place as the concentration of S2- ion is sufficient high; when E-0 of the substrate is positive, photooxidation reaction can be prohibited entirely under condition of high S2- ion concentration, even though it is able to occur while the concentration of S2- ion is low. Due to the strong interaction of S2- ion with the surface of US superfine particles, negative shift in flat potential E-fb of US leads to a change of gap position, and then to a variation in match relation between the red-ox potential E-0 of the substrate and the position of conducton band to valence band in semiconductor particles. According to Langmuir's adsorption isotherm model, a formula expressing the relation between the concentration c of modification compound and the negative shift A Efb in flat potential was derived: DeltaE(fb) = DeltaE(fb)(m) Kc/(1 + Kc), By using this formula, experiment facts may be explained rationally, the higher the concentration, the greater the amount of negative shift DeltaE(fb), and thus the more favourable to photoreduction reaction. Therefore, by choosing suitable modification substance and adjusting its concentration, the selection, direction as well as the mechanism of interfacial photoreaction can be controlled effectively. |
| 语种 | 英语 |
| WOS记录号 | WOS:000171302100004 |
| 出版者 | PEKING UNIV PRESS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/76701]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Chen, DW |
| 作者单位 | Chinese Acad Sci, Inst Chem, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Chen, DW,Liu, YQ,Yi, XY,et al. Influence of excess S2- ion on the interfacial photocatalysis in superfine CdS system and band-potential matching[J]. ACTA PHYSICO-CHIMICA SINICA,2001,17(9):781-787. |
| APA | Chen, DW,Liu, YQ,Yi, XY,&Xu, GZ.(2001).Influence of excess S2- ion on the interfacial photocatalysis in superfine CdS system and band-potential matching.ACTA PHYSICO-CHIMICA SINICA,17(9),781-787. |
| MLA | Chen, DW,et al."Influence of excess S2- ion on the interfacial photocatalysis in superfine CdS system and band-potential matching".ACTA PHYSICO-CHIMICA SINICA 17.9(2001):781-787. |
入库方式： OAI收割
来源：化学研究所
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