SiCN thin film prepared at room temperature by r.f. reactive sputtering
文献类型：期刊论文
| 作者 | Wu, XC; Cai, RQ; Yan, PX; Liu, WM; Tian, J |
| 刊名 | APPLIED SURFACE SCIENCE
 |
| 出版日期 | 2002-01-15 |
| 卷号 | 185期号:3-4页码:262-266 |
| 关键词 | Sicn Thin Film Room Temperature R.f. Reactive Sputtering |
| ISSN号 | 0169-4332 |
| 英文摘要 | Silicon-carbon nitride (SiCN) thin films were deposited on Si substrate at room temperature by r.f. reactive sputtering. Fourier transform infrared spectroscopy (FTIR), optical absorption spectra (alpha(lambda)) and electrical conductivity (sigma) were studied for the thin films. The effect of the annealing on IR and sigma was investigated at different temperatures. IR analysis indicates that Si-H, C-N, Si-C, Si-N, C-N and CdropN bonds are present in a-SiCN:H films. A shift of the stretching mode for Si-H bond to the high-wavenumber side is observed with increasing the nitrogen flow ratio gamma(N2) (=N-2/(Ar + H-2 + N-2 + CH4)). The shift is from 2000 to 2190 cm(-1) when gamma(N2) = 13.7%. The study shows that the film structure and optical and electrical properties are obviously modified readily by controlling the process parameters of deposition. The improvement in the film properties, e.g., good thermal stability, is explained mainly in terms of the cross-linked structure between the Si, C and N atoms. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 语种 | 英语 |
| WOS记录号 | WOS:000173623300014 |
| 出版者 | ELSEVIER SCIENCE BV |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/79383]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Yan, PX |
| 作者单位 | 1.Lanzhou Univ, Dept Phys, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Chem & Phys, State Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wu, XC,Cai, RQ,Yan, PX,et al. SiCN thin film prepared at room temperature by r.f. reactive sputtering[J]. APPLIED SURFACE SCIENCE,2002,185(3-4):262-266. |
| APA | Wu, XC,Cai, RQ,Yan, PX,Liu, WM,&Tian, J.(2002).SiCN thin film prepared at room temperature by r.f. reactive sputtering.APPLIED SURFACE SCIENCE,185(3-4),262-266. |
| MLA | Wu, XC,et al."SiCN thin film prepared at room temperature by r.f. reactive sputtering".APPLIED SURFACE SCIENCE 185.3-4(2002):262-266. |
入库方式： OAI收割
来源：化学研究所
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