Topographical, compositional and schottky characterization of PtSi/Si schottky diodes
文献类型：期刊论文
| 作者 | Li, MC; Zhao, LC; Liu, DG; Chen, XK |
| 刊名 | MATERIALS CHEMISTRY AND PHYSICS
 |
| 出版日期 | 2003-06-26 |
| 卷号 | 80期号:3页码:620-624 |
| ISSN号 | 0254-0584 |
| 关键词 | Pulsed Laser Deposition Atomic Force Microscopy Nanometer Thin Film Ptsi |
| DOI | 10.1016/S0254-0584(03)00090-7 |
| 英文摘要 | PtSi ultra-thin films were grown on Si-wafer using pulsed laser deposition (PLD). As determined from X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), the compositional structures of the PtSi were discussed. Furthermore, the surface structure of these films was studied by atomic force microscopy (AFM). A possible growth mechanism is presented, on studying the variation of morphological features (i.e., roughness and size of crystallites) with annealing temperature and films thickness. In addition, by the AFM studies and schottky characterization measurements of PtSi films forming during various annealing processing, preferable preparing conditions are proposed to form the continuous and smooth PtSi thin film on Si substrate by PLD. (C) 2003 Elsevier Science B.V. All rights reserved. |
| 语种 | 英语 |
| 出版者 | ELSEVIER SCIENCE SA |
| WOS记录号 | WOS:000182968500010 |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/79727]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Li, MC |
| 作者单位 | 1.Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China 2.Chinese Acad Sci, Inst Chem, STM Lab, Beijing 100080, Peoples R China 3.Lanzhou Inst Phys, Lab Laser Mol Beam Epitaxy, Lanzhou, Peoples R China |
| 推荐引用方式 GB/T 7714 | Li, MC,Zhao, LC,Liu, DG,et al. Topographical, compositional and schottky characterization of PtSi/Si schottky diodes[J]. MATERIALS CHEMISTRY AND PHYSICS,2003,80(3):620-624. |
| APA | Li, MC,Zhao, LC,Liu, DG,&Chen, XK.(2003).Topographical, compositional and schottky characterization of PtSi/Si schottky diodes.MATERIALS CHEMISTRY AND PHYSICS,80(3),620-624. |
| MLA | Li, MC,et al."Topographical, compositional and schottky characterization of PtSi/Si schottky diodes".MATERIALS CHEMISTRY AND PHYSICS 80.3(2003):620-624. |
入库方式： OAI收割
来源：化学研究所
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