中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Absorption and emission in quaterthienyl thin films

文献类型:期刊论文

作者Sun, H; Zhao, Z; Spano, FC; Beljonne, D; Cornil, J; Shuai, Z; Bredas, JL
刊名ADVANCED MATERIALS
出版日期2003-05-16
卷号15期号:10页码:818-+
ISSN号0935-9648
DOI10.1002/adma.200304770
英文摘要The salient features in the absorption and emission spectra of alphaT4 aggregates (see Figure) and films are fully accounted for using a model based on linear exciton-phonon coupling and structural defects. In particular, the Davydov splitting is calculated to be of the order of 1 eV, and the unusually small 0-0 emission intensity is attributed to the high sensitivity of the 0-0 intensity to basal plane structural defects.
语种英语
WOS记录号WOS:000183246100015
出版者WILEY-V C H VERLAG GMBH
源URL[http://ir.iccas.ac.cn/handle/121111/79739]  
专题中国科学院化学研究所
通讯作者Spano, FC
作者单位1.Temple Univ, Dept Chem, Philadelphia, PA 19122 USA
2.Univ Mons, B-7000 Mons, Belgium
3.Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
4.Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Sun, H,Zhao, Z,Spano, FC,et al. Absorption and emission in quaterthienyl thin films[J]. ADVANCED MATERIALS,2003,15(10):818-+.
APA Sun, H.,Zhao, Z.,Spano, FC.,Beljonne, D.,Cornil, J.,...&Bredas, JL.(2003).Absorption and emission in quaterthienyl thin films.ADVANCED MATERIALS,15(10),818-+.
MLA Sun, H,et al."Absorption and emission in quaterthienyl thin films".ADVANCED MATERIALS 15.10(2003):818-+.

入库方式: OAI收割

来源:化学研究所

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