中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.

文献类型:期刊论文

作者Mok, DKW; Yeung, AKT; Wang, DX; Chau, FT
刊名ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
出版日期2003-09-01
卷号226页码:U440-U440
ISSN号0065-7727
语种英语
WOS记录号WOS:000187062402055
出版者AMER CHEMICAL SOC
源URL[http://ir.iccas.ac.cn/handle/121111/80139]  
专题中国科学院化学研究所
作者单位1.Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hong Kong, Peoples R China
2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China
推荐引用方式
GB/T 7714
Mok, DKW,Yeung, AKT,Wang, DX,et al. Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,2003,226:U440-U440.
APA Mok, DKW,Yeung, AKT,Wang, DX,&Chau, FT.(2003).Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum..ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,226,U440-U440.
MLA Mok, DKW,et al."Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.".ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 226(2003):U440-U440.

入库方式: OAI收割

来源:化学研究所

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