Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.
文献类型:期刊论文
作者 | Mok, DKW; Yeung, AKT; Wang, DX; Chau, FT |
刊名 | ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY
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出版日期 | 2003-09-01 |
卷号 | 226页码:U440-U440 |
ISSN号 | 0065-7727 |
语种 | 英语 |
WOS记录号 | WOS:000187062402055 |
出版者 | AMER CHEMICAL SOC |
源URL | [http://ir.iccas.ac.cn/handle/121111/80139] ![]() |
专题 | 中国科学院化学研究所 |
作者单位 | 1.Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hong Kong, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing 100080, Peoples R China |
推荐引用方式 GB/T 7714 | Mok, DKW,Yeung, AKT,Wang, DX,et al. Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.[J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,2003,226:U440-U440. |
APA | Mok, DKW,Yeung, AKT,Wang, DX,&Chau, FT.(2003).Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum..ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY,226,U440-U440. |
MLA | Mok, DKW,et al."Low lying electronic states of HOCL cation: Ab initio calculations and simulations of the HE I photoelectron spectrum.".ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY 226(2003):U440-U440. |
入库方式: OAI收割
来源:化学研究所
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