中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Preparation, patterning and luminescent properties of nanocrystalline Gd2O3 : A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films via Pechini sol-gel soft lithography

文献类型:期刊论文

作者Pang, ML; Lin, J; Fu, J; Xing, RB; Luo, CX; Han, YC
刊名OPTICAL MATERIALS
出版日期2003-09-01
卷号23期号:3-4页码:547-558
关键词Sol-gel Soft Lithography Nanocrystalline Films Luminescent Properties Lanthanides
ISSN号0925-3467
DOI10.1016/S0925-3467(03)00020-X
英文摘要Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively. (C) 2003 Elsevier B.V. All rights reserved.
语种英语
WOS记录号WOS:000184368500006
出版者ELSEVIER SCIENCE BV
源URL[http://ir.iccas.ac.cn/handle/121111/80393]  
专题中国科学院化学研究所
通讯作者Lin, J
作者单位1.Chinese Acad Sci, Changchun Inst Appl Chem, Key Lab Rare Earth Chem & Phys, Changchun 130022, Peoples R China
2.Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
推荐引用方式
GB/T 7714
Pang, ML,Lin, J,Fu, J,et al. Preparation, patterning and luminescent properties of nanocrystalline Gd2O3 : A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films via Pechini sol-gel soft lithography[J]. OPTICAL MATERIALS,2003,23(3-4):547-558.
APA Pang, ML,Lin, J,Fu, J,Xing, RB,Luo, CX,&Han, YC.(2003).Preparation, patterning and luminescent properties of nanocrystalline Gd2O3 : A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films via Pechini sol-gel soft lithography.OPTICAL MATERIALS,23(3-4),547-558.
MLA Pang, ML,et al."Preparation, patterning and luminescent properties of nanocrystalline Gd2O3 : A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films via Pechini sol-gel soft lithography".OPTICAL MATERIALS 23.3-4(2003):547-558.

入库方式: OAI收割

来源:化学研究所

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