High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction
文献类型：期刊论文
| 作者 | Xiao, K; Liu, YQ; Hu, PG; Yu, G; Fu, L; Zhu, DB |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2003-12-08 |
| 卷号 | 83期号:23页码:4824-4826 |
| ISSN号 | 0003-6951 |
| DOI | 10.1063/1.1633015 |
| 英文摘要 | Field-effect transistors (FETs) based on an individual CNx/C nanotube (NT) were fabricated by focus ion-beam technology. The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated more than four orders of magnitude at room temperature. The electron mobility of a CNx/C NT FET estimated from its transconductance was as high as 3.84x10(3) cm(2)/V s. The n-type gate modulation could be explained as due the effect of bending of the valence band in the Schottky-barrier junction. (C) 2003 American Institute of Physics. |
| 语种 | 英语 |
| WOS记录号 | WOS:000186970200046 |
| 出版者 | AMER INST PHYSICS |
| 源URL | [http://ir.iccas.ac.cn/handle/121111/81249]  |
| 专题 | 中国科学院化学研究所 |
| 通讯作者 | Zhu, DB |
| 作者单位 | Chinese Acad Sci, Inst Chem, Ctr Mol Sci, Beijing 100080, Peoples R China |
| 推荐引用方式 GB/T 7714 | Xiao, K,Liu, YQ,Hu, PG,et al. High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction[J]. APPLIED PHYSICS LETTERS,2003,83(23):4824-4826. |
| APA | Xiao, K,Liu, YQ,Hu, PG,Yu, G,Fu, L,&Zhu, DB.(2003).High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction.APPLIED PHYSICS LETTERS,83(23),4824-4826. |
| MLA | Xiao, K,et al."High performance field-effect transistors made of a multiwall CNx/C nanotube intramolecular junction".APPLIED PHYSICS LETTERS 83.23(2003):4824-4826. |
入库方式： OAI收割
来源：化学研究所
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