The role of sulfite in the wetting etching of silicon and silica
文献类型:期刊论文
作者 | Ouyang, JH; Wu, NZ; Zhao, XS |
刊名 | ACTA PHYSICO-CHIMICA SINICA
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出版日期 | 2004-06-01 |
卷号 | 20期号:6页码:612-615 |
关键词 | Silicon Silica Etching Rate Ammonium Fluoride Ammonium Sulfite Photolithography |
ISSN号 | 1000-6818 |
DOI | 10.3866/PKU.WHXB20040612 |
英文摘要 | The effects of sulfite on the etching processes of silicon and silica in 40% ( w) NH4F aqueous solution have been studied by a method based on photolithography and atomic force microscopy (AFM). It is demonstrated that the silicon and silica etching rates depend on the sulfite concentrations. The spectra of the F 1 s core level in the high resolution X-ray photoelectron spectroscopy (XPS) for surfaces treated in solutions with/without sulfite suggest the chemistry of the surfaces is different in the two cases. The experimental results indicate that sulfite not only acts as an oxygen scavenger, but also influences the surface reactions in the wetting etching of Si and SiO2. |
语种 | 英语 |
WOS记录号 | WOS:000222223400012 |
出版者 | PEKING UNIV PRESS |
源URL | [http://ir.iccas.ac.cn/handle/121111/82065] ![]() |
专题 | 中国科学院化学研究所 |
通讯作者 | Zhao, XS |
作者单位 | 1.Peking Univ, Coll Chem & Mol Engn, State Key Lab Struct Chem Unstable & Stable Speci, Beijing 100871, Peoples R China 2.Peking Univ, Coll Chem & Mol Engn, Dept Biol Chem, Beijing 100871, Peoples R China |
推荐引用方式 GB/T 7714 | Ouyang, JH,Wu, NZ,Zhao, XS. The role of sulfite in the wetting etching of silicon and silica[J]. ACTA PHYSICO-CHIMICA SINICA,2004,20(6):612-615. |
APA | Ouyang, JH,Wu, NZ,&Zhao, XS.(2004).The role of sulfite in the wetting etching of silicon and silica.ACTA PHYSICO-CHIMICA SINICA,20(6),612-615. |
MLA | Ouyang, JH,et al."The role of sulfite in the wetting etching of silicon and silica".ACTA PHYSICO-CHIMICA SINICA 20.6(2004):612-615. |
入库方式: OAI收割
来源:化学研究所
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