Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials
文献类型：期刊论文
| 作者 | Zhou, Jiangning1,2; Li, Bincheng1,3 |
| 刊名 | OPTICAL MATERIALS EXPRESS
 |
| 出版日期 | 2018-04-01 |
| 卷号 | 8期号:4页码:775-784 |
| 关键词 | Defects Irradiation Laser excitation Photoluminescence Two photon processes |
| ISSN号 | 2159-3930 |
| DOI | 10.1364/OME.8.000775 |
| 文献子类 | J |
| 英文摘要 | We reported on the study of the correlation between 193nm absorption under 1.5 similar to 5.0mJ/cm(2) fluence irradiation and photoluminescence (PL) related defects for deepultraviolet (DUV) fused silica samples with different H-2 and OH contents (0 similar to 1200ppm). Experimental results showed strong correlations between apparent nonlinear absorption at 193nm to 650nm PL band originated from a non-bridging oxygen hole center (NBOHC), and between apparent linear absorption at 193nm to 550nm PL band. In addition, only 650nm PL defects showed reversible concentration change under 193nm laser irradiation, indicating a possible link to the rapid damage process (RDP) under DUV irradiation. Experimental observation and theoretical calculations on the dependence of 650nm PL intensity on the laser fluence further demonstrated that the generation and annealing processes of NBOHC in these DUV fused silica samples are mainly due to two-photon excitation induced breakage of SiOH bond and combination of NBOHC with H-2. These results give new insight into the influence of NBOHC and SiOH on fused silica's DUV absorption and transmission properties, and therefore are helpful to the development of high-performance DUV fused silica materials. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement |
| WOS关键词 | OXYGEN HOLE-CENTERS ; BAND ; LUMINESCENCE ; GLASS ; EXCITATION ; NM ; UV |
| 语种 | 英语 |
| WOS记录号 | WOS:000428955700007 |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9328]  |
| 专题 | 光电技术研究所_薄膜光学技术研究室（十一室） |
| 作者单位 | 1.Institute of Optics and Electronics, Chinese Academy of Sciences, Shuangliu, Chengdu; 610209, China; 2.Graduate University of Chinese Academy of Sciences, Beijing; 100049, China; 3.School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu; 610054, China |
| 推荐引用方式 GB/T 7714 | Zhou, Jiangning,Li, Bincheng. Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials[J]. OPTICAL MATERIALS EXPRESS,2018,8(4):775-784. |
| APA | Zhou, Jiangning,&Li, Bincheng.(2018).Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials.OPTICAL MATERIALS EXPRESS,8(4),775-784. |
| MLA | Zhou, Jiangning,et al."Correlation between 193nm absorption and photoluminescence-related defects for fused silica materials".OPTICAL MATERIALS EXPRESS 8.4(2018):775-784. |
入库方式： OAI收割
来源：光电技术研究所
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