中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Large area deep subwavelength interference lithography with a 35 nm half-period based on bulk plasmon polaritons

文献类型:期刊论文

作者Liu, Hongchao; Luo, Yunfei; Kong, Weijie; Liu, Kaipeng; Du, Wenjuan; Zhao, Chengwei; Gao, Ping; Zhao, Zeyu; Wang, Changtao; Pu, Mingbo
刊名OPTICAL MATERIALS EXPRESS
出版日期2018-02-01
卷号8期号:2页码:199-209
ISSN号2159-3930
DOI10.1364/OME.8.000199
文献子类J
英文摘要Interference lithography is an important method for fabricating periodical nano-structures. Its resolution, however, is limited with the minimum period being half the wavelength of light due to the diffraction limit. In this study, we presented bulk plasmon polariton (BPP) interference lithography with the resolution far beyond the diffraction limit. As a demonstrative result, a periodical line pattern of a 35 nm half-period (about 1/10 the wavelength of laser) over a large area (20 x 20 mm) was achieved in an experiment. The break of diffraction limit arises from exciting BPP modes with the high k(x) spatial frequency components inside hyperbolic metamaterial (HMM) composed by metal-dielectric multifilms. To enhance the contrast and intensity of the interference fringe field of two BPP modes, a metal cladding resist layer and optimized materials are employed. In addition, the period of interference patterns could be tuned by exciting BPP modes with variant kx spatial frequency. It is believed that the method with low cost, large area, and high resolution advantages has potential applications for manufacturing functional structures like gratings, polarizers, and photonic crystals, etc. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
WOS关键词PHOTONIC CRYSTALS ; EUV LITHOGRAPHY ; NANOLITHOGRAPHY ; DIFFRACTION ; FABRICATION ; SUPERLENS ; EXTREME
语种英语
WOS记录号WOS:000425921600001
源URL[http://ir.ioe.ac.cn/handle/181551/9327]  
专题光电技术研究所_微细加工光学技术国家重点实验室(开放室)
推荐引用方式
GB/T 7714
Liu, Hongchao,Luo, Yunfei,Kong, Weijie,et al. Large area deep subwavelength interference lithography with a 35 nm half-period based on bulk plasmon polaritons[J]. OPTICAL MATERIALS EXPRESS,2018,8(2):199-209.
APA Liu, Hongchao.,Luo, Yunfei.,Kong, Weijie.,Liu, Kaipeng.,Du, Wenjuan.,...&Luo, Xiangang.(2018).Large area deep subwavelength interference lithography with a 35 nm half-period based on bulk plasmon polaritons.OPTICAL MATERIALS EXPRESS,8(2),199-209.
MLA Liu, Hongchao,et al."Large area deep subwavelength interference lithography with a 35 nm half-period based on bulk plasmon polaritons".OPTICAL MATERIALS EXPRESS 8.2(2018):199-209.

入库方式: OAI收割

来源:光电技术研究所

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