Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching
文献类型：会议论文
| 作者 | Zhang Jingwen; Fan Bin; Li Zhiwei; Liu Xin; Li Bincheng; Han Yu; Gong Chang |
| 出版日期 | 2018 |
| 会议日期 | JUN 26-29, 2018JUN 26-29, 2018 |
| 会议地点 | Chengdu, PEOPLES R CHINAChengdu, PEOPLES R CHINA |
| 关键词 | reactive ion etching Fluent(Ansys) numerical simulation pressure distribution |
| 卷号 | 10841 |
| DOI | 10.1117/12.2512222 |
| 页码 | 108410G |
| 英文摘要 | Gas flow distribution of reaction chamber of reactive ion etching (RIE) etcher is usually considered to be a main factor in determining both the plasma distribution and etching uniformity. Based on the continuum fluid and heat transfer models of the commercial software, Fluent(Ansys), the gas flow distribution of the reaction chamber was simulated. And then the spatial distribution profiles of the pressures above the electrode surface under the different mass flow (50 similar to 250sccm) inlet conditions , and the influence of the different GAP (L = 0.03 similar to 0.06m) of the chambers on the gas flow uniformity were discussed. The result shows that the pressure distribution above the electrode has the character which the pressure is higher in the center of the electrode and lower at the edge and increases with the rise of the mass flow of inlet. And the uniformity of the gas flow distribution is enhanced with the rise of the GAP of the chamber. |
| 会议录 | Proceedings of SPIE - 9TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES (AOMATT 2018): META-SURFACE-WAVE AND PLANAR OPTICS
 |
| 文献子类 | C |
| 语种 | 英语 |
| ISSN号 | 0277-786X |
| WOS记录号 | WOS:000461820700015 |
| WOS关键词 | LOW-PRESSURE ; UNIFORMITY ; OPTIMIZATION |
| 源URL | [http://ir.ioe.ac.cn/handle/181551/9145]  |
| 专题 | 薄膜光学相机总体室 |
| 推荐引用方式 GB/T 7714 | Zhang Jingwen,Fan Bin,Li Zhiwei,et al. Gas Flow Simulation Research on Reaction Chamber of Reactive ion etching[C]. 见:. Chengdu, PEOPLES R CHINAChengdu, PEOPLES R CHINA. JUN 26-29, 2018JUN 26-29, 2018. |
入库方式： OAI收割
来源：光电技术研究所
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