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Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1

文献类型：期刊论文

作者Kanisauskas, K; Affolder, A; Arndt, K; Bates, R; Benoit, M; Di Bello, F; Blue, A; Bortoletto, D; Buckland, M; Buttar, C
刊名JOURNAL OF INSTRUMENTATION
出版日期2017
卷号12页码:2010
关键词Radiation-hard detectors Solid state detectors Si microstrip and pad detectors
ISSN号1748-0221
DOI10.1088/1748-0221/12/02/P02010
文献子类Article
英文摘要CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of approximate to 2.4 and approximate to 2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85e(-) to 386e(-) and from 75e(-) to 277e(-) for the corresponding pixels.
WOS关键词HIGH-ENERGY-PHYSICS ; PIXEL DETECTOR
WOS研究方向Instruments & Instrumentation
语种英语
WOS记录号WOS:000397826200010
源URL[http://ir.ihep.ac.cn/handle/311005/284482]  
专题高能物理研究所_加速器中心
高能物理研究所_实验物理中心
作者单位中国科学院高能物理研究所
推荐引用方式
GB/T 7714		 Kanisauskas, K,Affolder, A,Arndt, K,et al. Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1[J]. JOURNAL OF INSTRUMENTATION,2017,12:2010.
APA Kanisauskas, K.,Affolder, A.,Arndt, K.,Bates, R.,Benoit, M.,...&宋维民.(2017).Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1.JOURNAL OF INSTRUMENTATION,12,2010.
MLA Kanisauskas, K,et al."Radiation hardness studies of AMS HV-CMOS 350nm prototype chip HVStripV1".JOURNAL OF INSTRUMENTATION 12(2017):2010.

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来源：高能物理研究所

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