Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology
文献类型:期刊论文
作者 | Zhou Y(周扬); Lu YP(卢云鹏)![]() ![]() |
刊名 | JOURNAL OF INSTRUMENTATION
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出版日期 | 2017 |
卷号 | 12页码:C01037 |
关键词 | X-ray detectors Pixelated detectors and associated VLSI electronics Solid state detectors |
ISSN号 | 1748-0221 |
DOI | 10.1088/1748-0221/12/01/C01037 |
文献子类 | Article; Proceedings Paper |
英文摘要 | The overall noise performances and first synchrotron beam measurement results of CPIXETEG3b, the first counting type Silicon-On-Insulator (SOI) pixel sensor prototype without crosstalk issue, are reported. The prototype includes a 64 x 64 pixel matrix with 50 mu m pitch size. Each pixel consists of an N-in-P charge collection diode, a charge sensitive preamplifier, a shaper, a discriminator with thresholds adjustable by an in-pixel 4-bit DAC, and a 6-bit counter. The study was performed using the beam line 14A at KEK Photon Factory (KEK-PF). The homogeneous response of the prototype, including charging-sharing effects between pixels were studied. 16 keV and 8 keV monochromatic small size (similar to 10 mu m diameter) X-ray beams were used for the charge sharing study, and a flat-field was added for homogenous response investigation. The overall detector homogeneity and the influence of basic detector parameters on charge sharing between pixels has been investigated. |
会议地点 | Barcelona, SPAIN |
会议日期 | JUL 03-07, 2016 |
WOS研究方向 | Instruments & Instrumentation |
语种 | 英语 |
WOS记录号 | WOS:000395768300037 |
源URL | [http://ir.ihep.ac.cn/handle/311005/284804] ![]() |
专题 | 高能物理研究所_实验物理中心 |
作者单位 | 中国科学院高能物理研究所 |
推荐引用方式 GB/T 7714 | Zhou Y,Lu YP,Zhou, Y,et al. Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology[J]. JOURNAL OF INSTRUMENTATION,2017,12:C01037. |
APA | 周扬.,卢云鹏.,Zhou, Y.,Lu, Y.,Hashimoto, R.,...&欧阳群.(2017).Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology.JOURNAL OF INSTRUMENTATION,12,C01037. |
MLA | 周扬,et al."Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology".JOURNAL OF INSTRUMENTATION 12(2017):C01037. |
入库方式: OAI收割
来源:高能物理研究所
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