Evaluation of a pulse counting type SOI pixel using synchrotron radiation X-ray
文献类型：期刊论文
| 作者 | SOIPIX Collaboration |
| 刊名 | JOURNAL OF INSTRUMENTATION
 |
| 出版日期 | 2017 |
| 卷号 | 12页码:C03061 |
| 关键词 | X-ray detectors X-ray diffraction detectors |
| ISSN号 | 1748-0221 |
| DOI | 10.1088/1748-0221/12/03/C03061 |
| 文献子类 | Article; Proceedings Paper |
| 英文摘要 | Silicon-On-Insulator (SOI) technology was used to develop a fine pixelated detector with high performance. The first beam test for a prototype pulse-counting-type SOI chip, CPIXTEG3b, was performed at beamline BL-14A of the Photon Factory, KEK. CPIXTEG3b was designed using double SOI technology for decreasing crosstalk and increasing radiation hardness. It has a 64 x 64 pixel array wherein each pixel size is 50 mu m x 50 mu m. The sensitivity to incident X-rays was measured for each pixel with an X-ray beam 10 mu m in diameter. We used the X-ray energy of 16 keV. Because of its small size, the pixel response was sensitive to the charge-sharing effect. We also considered the point spread function of the sensor. The discriminator of each pixel circuit was calibrated using a pulse generator, and performance was checked using flat-field X-rays. |
| 会议地点 | Sestri Levante, ITALY |
| WOS关键词 | PROCESS TECHNOLOGY |
| 会议日期 | SEP 05-09, 2016 |
| WOS研究方向 | Instruments & Instrumentation |
| 语种 | 英语 |
| WOS记录号 | WOS:000406997400061 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/284809]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 中国科学院高能物理研究所 |
| 推荐引用方式 GB/T 7714 | SOIPIX Collaboration. Evaluation of a pulse counting type SOI pixel using synchrotron radiation X-ray[J]. JOURNAL OF INSTRUMENTATION,2017,12:C03061. |
| APA | SOIPIX Collaboration.(2017).Evaluation of a pulse counting type SOI pixel using synchrotron radiation X-ray.JOURNAL OF INSTRUMENTATION,12,C03061. |
| MLA | SOIPIX Collaboration."Evaluation of a pulse counting type SOI pixel using synchrotron radiation X-ray".JOURNAL OF INSTRUMENTATION 12(2017):C03061. |
入库方式： OAI收割
来源：高能物理研究所
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