中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer

文献类型:期刊论文

作者Lei, Qiang; Lei Q(雷强); Gao, Yang; Li, Jun-Ru; Jia, Le
刊名Proceedings of SPIE - The International Society for Optical Engineering
出版日期2017
卷号10244页码:102441W
关键词RF MEMS capacitive switch dielectric layer roughness latching down-state capacitance degradation
ISSN号0277-786X
DOI10.1117/12.2261426
文献子类Proceedings Paper
英文摘要In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S-21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S-21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer.
会议地点Shanghai, PEOPLES R CHINA
电子版国际标准刊号1996-756X
会议日期OCT 10-12, 2016
WOS研究方向Science & Technology - Other Topics ; Optics
语种英语
WOS记录号WOS:000394540100067
ISBN号978-1-5106-0989-1; 978-1-5106-0990-7
源URL[http://ir.ihep.ac.cn/handle/311005/285411]  
专题高能物理研究所_实验物理中心
作者单位1.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China
2.Chongqing Univ, Natl Key Lab Fundamental Sci Micro Nanodevice & S, Chongqing 400044, Peoples R China
3.Southwest Univ Sci & Technol, Sch Informat Engn, Mianyang 621010, Sichuan, Peoples R China
4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China
推荐引用方式
GB/T 7714
Lei, Qiang,Lei Q,Gao, Yang,et al. Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017,10244:102441W.
APA Lei, Qiang,雷强,Gao, Yang,Li, Jun-Ru,&Jia, Le.(2017).Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer.Proceedings of SPIE - The International Society for Optical Engineering,10244,102441W.
MLA Lei, Qiang,et al."Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer".Proceedings of SPIE - The International Society for Optical Engineering 10244(2017):102441W.

入库方式: OAI收割

来源:高能物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。