Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer
文献类型：期刊论文
| 作者 | Lei, Qiang; Lei Q(雷强); Gao, Yang; Li, Jun-Ru; Jia, Le |
| 刊名 | Proceedings of SPIE - The International Society for Optical Engineering
 |
| 出版日期 | 2017 |
| 卷号 | 10244页码:102441W |
| 关键词 | RF MEMS capacitive switch dielectric layer roughness latching down-state capacitance degradation |
| ISSN号 | 0277-786X |
| DOI | 10.1117/12.2261426 |
| 文献子类 | Proceedings Paper |
| 英文摘要 | In order to obtain the high-fidelity model of latching failure threshold power of the capacitive RF MEMS switch, it is necessary to find out the rough dielectric layer effect on its down-state capacitance degradation. The comparative modeling method between the 3-D electromagnetic simulation and the equivalent circuit simulation is proposed. First, the simulation curve of the switch isolation (S-21) is attained at different roughness levels with the HFSS 3-D electromagnetic model. And then the simulation curve of the S-21 of the ADS equivalent circuit model is consistent with the simulation result of the 3-D electromagnetic as far as possible by tuning the down-state capacitance in the equivalent circuit. Hence, the relationship between the dielectric layer roughness and the down-state capacitance is identified. By changing the roughness level of dielectric layer and repeating the above steps, the relationship between the dielectric layer roughness and the down-state capacitance degradation is identified. Rationality and feasibility of the method is verified by comparing the calculated values of the down-state capacitance with the measured values in a relevant literature. And analytical equation of the latching failure threshold power of the capacitive RF MEMS switch with perfect smooth dielectric layer is modified, according to the relationship between the dielectric layer roughness and the down-state capacitance degradation, which is also suitable for predicting the power handling capacity of the switch with rough dielectric layer. |
| 会议地点 | Shanghai, PEOPLES R CHINA |
| 电子版国际标准刊号 | 1996-756X |
| 会议日期 | OCT 10-12, 2016 |
| WOS研究方向 | Science & Technology - Other Topics ; Optics |
| 语种 | 英语 |
| WOS记录号 | WOS:000394540100067 |
| ISBN号 | 978-1-5106-0989-1; 978-1-5106-0990-7 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285411]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 1.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China 2.Chongqing Univ, Natl Key Lab Fundamental Sci Micro Nanodevice & S, Chongqing 400044, Peoples R China 3.Southwest Univ Sci & Technol, Sch Informat Engn, Mianyang 621010, Sichuan, Peoples R China 4.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Sichuan, Peoples R China |
| 推荐引用方式 GB/T 7714 | Lei, Qiang,Lei Q,Gao, Yang,et al. Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017,10244:102441W. |
| APA | Lei, Qiang,雷强,Gao, Yang,Li, Jun-Ru,&Jia, Le.(2017).Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer.Proceedings of SPIE - The International Society for Optical Engineering,10244,102441W. |
| MLA | Lei, Qiang,et al."Characterization of down-state capacitance degradation in capacitive RF MEMS switch with rough dielectric layer".Proceedings of SPIE - The International Society for Optical Engineering 10244(2017):102441W. |
入库方式： OAI收割
来源：高能物理研究所
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