Analysis on gamma irradiation sensing mechanisms of thin film bulk acoustic resonators
文献类型：期刊论文
| 作者 | Gao, Yang; Han, Bin; Lv, Jun-Guang; Wang, Yu-Hang; Gao Y(高扬) |
| 刊名 | Proceedings of SPIE - The International Society for Optical Engineering
 |
| 出版日期 | 2017 |
| 卷号 | 10462页码:1046219 |
| 关键词 | FBAR gamma irradiation voltage space charge layer capacitor frequency shift |
| ISSN号 | 0277-786X |
| DOI | 10.1117/12.2283331 |
| 其他题名 | Proceedings of SPIE - The International Society for Optical Engineering |
| 文献子类 | Proceedings Paper |
| 英文摘要 | Experiment shows that thin film bulk acoustic resonator (FBAR) is feasible to detect gamma irradiation, but the sensing mechanism is not studied deeply. For this problem, different sensing mechanisms are proposed to explain the resonance frequency shift after gamma irradiation according to two different FBAR structures. One FBAR structure is four - layers stacked (metal layer - piezoelectric layer - oxide layer - metal layer). After gamma irradiation, a voltage will be formed in the radiation sensitive layer (oxide layer), which is equivalent to impose a DC voltage to the piezoelectric layer that makes resonant frequency shift. There is a semiconductor layer between oxide layer and piezoelectric layer in the other FBAR structure, which is the difference between the two structures. A voltage formed in the oxide layer after irradiation will change the surface potential of the semiconductor and then change the space charge layer capacitor in semiconductor that makes the resonant frequency shift. The results of two mechanisms are obtained by simulation and compared with those in related literature, it is found that the trends and magnitudes of frequency shift are the same, so the two mechanisms are feasible. |
| 会议地点 | Beijing, PEOPLES R CHINA |
| 电子版国际标准刊号 | 1996-756X |
| WOS关键词 | RADIATION ; DOSIMETER ; THERAPY ; SENSOR ; SYSTEM |
| 会议日期 | JUN 04-06, 2017 |
| WOS研究方向 | Remote Sensing ; Optics ; Imaging Science & Photographic Technology |
| 语种 | 英语 |
| WOS记录号 | WOS:000425515000044 |
| ISBN号 | 978-1-5106-1406-2; 978-1-5106-1405-5 |
| 源URL | [http://ir.ihep.ac.cn/handle/311005/285417]  |
| 专题 | 高能物理研究所_实验物理中心 |
| 作者单位 | 1.Chinese Acad Sci, Inst High Energy Phys, State Key Lab Particle Detect & Elect, Beijing 100049, Peoples R China 2.China Acad Engn Phys, Inst Elect Engn, Mianyang 621999, Peoples R China 3.Southwest Univ Sci & Technol, Sch Informat Engn, Mianyang 621010, Peoples R China |
| 推荐引用方式 GB/T 7714 | Gao, Yang,Han, Bin,Lv, Jun-Guang,et al. Analysis on gamma irradiation sensing mechanisms of thin film bulk acoustic resonators[J]. Proceedings of SPIE - The International Society for Optical Engineering,2017,10462:1046219. |
| APA | Gao, Yang,Han, Bin,Lv, Jun-Guang,Wang, Yu-Hang,&高扬.(2017).Analysis on gamma irradiation sensing mechanisms of thin film bulk acoustic resonators.Proceedings of SPIE - The International Society for Optical Engineering,10462,1046219. |
| MLA | Gao, Yang,et al."Analysis on gamma irradiation sensing mechanisms of thin film bulk acoustic resonators".Proceedings of SPIE - The International Society for Optical Engineering 10462(2017):1046219. |
入库方式： OAI收割
来源：高能物理研究所
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